Inventor
Tsutomu Nakanishi
Inventor
Tokyo, JP
Overview
Patents· 54 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices8%
H01JElectric discharge tubes or discharge lamps7%
F16CShafts6%
H10HInorganic light-emitting semiconductor devices having potential barriers6%
H10KOrganic electric solid-state devices6%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
H03HImpedance networks, e.g. resonant circuits4%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution4%
C03CChemical composition of glasses, glazes or vitreous enamels3%
PatentTitleYear
11,008,633Non-oriented electrical steel sheet and production method thereof202110,975,451Method for producing non-oriented electrical steel sheet having excellent magnetic properties202110,941,458Non-oriented electrical steel sheet, production method therefor, and motor core202110,251,628Ultrasonic diagnostic apparatus and biometrical examination apparatus201910,249,531Method for forming metal wiring201910,147,612Metal pattern forming method20189,857,594'Optical device and head-mounted display device and imaging device equipped with the same'20189,231,132'Process for manufacturing solar cell equipped with electrode having mesh structure'20169,177,989'Imaging device'20159,153,363'Light-transmitting metal electrode and process for production thereof'20159,142,728'Semiconductor light emitting device and method for manufacturing the same'20159,136,405'Light transmission type solar cell and method for producing the same'20158,993,869'Photoelectric conversion element'20158,840,258'Antireflection structure formation method and antireflection structure'20148,841,615'Electron microscope'20148,835,954'Semiconductor light emitting device and method for manufacturing the same'20148,770,025'Physical quantity sensor'20148,754,431'Light emitting device with an electrode having a through-holes'20148,692,283'Light-transmitting metal electrode, electronic apparatus and light emitting device'20148,686,459'Light-transmitting metal electrode and process for production thereof'20148,450,768'Semiconductor light-emitting element and process for production thereof'20138,450,824'Optically transmissive metal electrode, electronic device, and optical device'20138,361,339'Antireflection structure formation method and antireflection structure'20138,355,204'Light-extraction layer of light-emitting device and organic electroluminescence element employing the same'20138,344,354'Spin-polarized electron source'20138,101,964'Semiconductor light-emitting element and process for production thereof'20127,928,353'Displaying device and lighting device employing organic electroluminescence element'20117,786,665'Organic electroluminescent device having a diffraction grating for enhancing light extraction efficiency'20107,776,196'Method for arranging particles and method for manufacturing light-emitting device'20107,759,861'Organic EL display'20107,164,179'Angular-velocity sensor'20077,057,490'Resistor and production method therefor'20066,859,133'Resistor'20056,826,060'Power supply apparatus'20046,558,667'Method for treating renal disease, and pharmaceutical composition for treating renal disease'20036,403,959'Infrared detector element, and infrared sensor unit and infrared detecting device using it'20026,097,080'Semiconductor device having magnetic shield layer circumscribing the device'20006,087,901'Tuning amplifier'20006,081,157'Tuning circuit'20006,058,295'Tuning circuit including a plurality of cascade connected tuning amplifier sections'20005,877,510'Spin polarized electron semiconductor source and apparatus utilizing the same'19995,846,845'LC element manufacturing method'19985,834,791'Process of emitting highly spin-polarized electron beam and semiconductor device therefor'19985,723,871'Process of emitting highly spin-polarized electron beam and semiconductor device therefor'19985,523,572'Process of emitting highly spin-polarized electron beam and semiconductor device therefor'19965,500,552'LC element, semiconductor device and LC element manufacturing method'19965,048,982'Rotary structure'19914,993,851'Rotary structure'19914,958,945'Spindle unit'19904,958,943'Ball bearing'19904,939,606'Rotary head assembly for digital audio tape recorders'19904,934,843'Rotary structure'19904,909,640'Ball bearing'19904,883,370'Rotary structure'1989Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1989–1991Patents assigned to CSU LTD (8)· patent assignee history
1990–1991Based in Kunitachi, JP· patent location history
1996–2021Based in Tokyo, JP· patent location history
1996–2014Based in Nagoya, JP· patent location history
2002–2014Based in Osaka, JP· patent location history
2010–2019Patents assigned to TOSHIBA KK (23)· patent assignee history
2012–2015Patents assigned to NAKANISHI TSUTOMU (15)· patent assignee history
2012–2015Patents assigned to FUJIMOTO AKIRA (12)· patent assignee history
2012–2015Patents assigned to ASAKAWA KOJI (10)· patent assignee history
2015–2019Based in Yokohama, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOSHIBA KK | 23 | 2010–2019 |
| NAKANISHI TSUTOMUself | 15 | 2012–2015 |
| FUJIMOTO AKIRA | 12 | 2012–2015 |
| ASAKAWA KOJI | 10 | 2012–2015 |
| CSU LTD | 8 | 1989–1991 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 28 | 1996–2021 |
| Kunitachi, JP | 7 | 1990–1991 |
| Nagoya, JP | 5 | 1996–2014 |
| Osaka, JP | 5 | 2002–2014 |
| Yokohama, JP | 4 | 2015–2019 |