Inventor
Sheila K. Hurtt
Inventor
Portland, OR, US
Overview
Patents· 8 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices15%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light15%
H10DInorganic electric semiconductor devices15%
B82YSpecific uses or applications of nanostructures8%
G02BOptical elements, systems or apparatus8%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation8%
H10HInorganic light-emitting semiconductor devices having potential barriers8%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution8%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein4%
PatentTitleYear
10,720,428High bandgap Schottky contact layer device202010,012,797Monolithic photonic integrated circuit (PIC) with a plurality of integrated arrays of laser sources and modulators employing an extended identical active layer (EIAL)20189,923,088'Semiconductor device with vertically integrated pHEMTs'20189,608,084'Emitter contact epitaxial structure and ohmic contact formation for heterojunction bipolar transistor'20179,372,306'Method of achieving acceptable performance in and fabrication of a monolithic photonic integrated circuit (PIC) with integrated arrays of laser sources and modulators employing an extended identical active layer (EIAL)'20169,231,088'Emitter contact epitaxial structure and ohmic contact formation for heterojunction bipolar transistor'20167,208,770'Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs)'20077,122,846'Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs)'2006Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2006–2018Patents assigned to INFINERA CORP (4)· patent assignee history
2006–2018Based in Redwood City, CA, US· patent location history
2016–2018Patents assigned to DENTAI ANDREW G (2)· patent assignee history
2016–2018Patents assigned to DOMINIC VINCENT G (2)· patent assignee history
2016–2018Patents assigned to HURTT SHEILA K (2)· patent assignee history
2016–2020Based in Portland, OR, US· patent location history
2017–2020Patents assigned to QORVO US INC (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INFINERA CORP | 4 | 2006–2018 |
| QORVO US INC | 3 | 2017–2020 |
| DENTAI ANDREW G | 2 | 2016–2018 |
| DOMINIC VINCENT G | 2 | 2016–2018 |
| HURTT SHEILA Kself | 2 | 2016–2018 |
Locations
| Location | Patents | Span |
|---|---|---|
| Portland, OR, US | 4 | 2016–2020 |
| Redwood City, California, US | 4 | 2006–2018 |