Inventor
Carsten Ahrens
Inventor
Pettendorf, DE
Overview
Patents· 52 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1020%
H10DInorganic electric semiconductor devices19%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
H01LSemiconductor devices12%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems7%
B81BMicrostructural devices or systems, e.g. micromechanical devices6%
H01FMagnets4%
H04RLoudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers4%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution4%
Y10TTechnical subjects covered by former us classification3%
PatentTitleYear
10,916,515Systems and methods using an RF circuit on isolating material202110,829,368MEMS device and method of manufacturing a MEMS device202010,734,987RF switch202010,629,575Stacked die semiconductor package with electrical interposer202010,575,101Microelectromechanical microphone202010,504,772Field emission devices and methods of making thereof201910,384,934MEMS device and method of manufacturing a MEMS device201910,153,266Semiconductor device201810,128,204RF module201810,008,318System and method for integrated inductor20189,966,277Arrangement and method for manufacturing the same20189,948,641Method and devices for providing a subscription profile on a mobile terminal20189,938,140MEMS device and method of manufacturing a MEMS device20189,711,392'Field emission devices and methods of making thereof'20179,524,940'Method for manufacturing a semiconductor device, and semiconductor device'20169,458,009'Semiconductor devices and methods of forming thereof'20169,449,847'Method for manufacturing a semiconductor device by thermal treatment with hydrogen'20169,402,138'MEMS device and method of manufacturing a MEMS device'20169,363,609'Method for fabricating a cavity structure, for fabricating a cavity structure for a semiconductor structure and a semiconductor microphone fabricated by the same'20169,293,409'Method for manufacturing a semiconductor device, and semiconductor device'20169,236,290'Method for producing a semiconductor device'20169,196,568'Arrangement and method for manufacturing the same'20159,177,950'Protective structure and method for producing a protective structure'20159,171,918'Semiconductor device with an electrode buried in a cavity'20159,102,519'Semiconductor devices and methods of forming thereof'20158,993,372'Method for producing a semiconductor component'20158,975,612'Integrated circuits with magnetic core inductors and methods of fabrications thereof'20158,952,489'Semiconductor package and method for fabricating the same'20158,951,879'Method for producing a protective structure'20158,883,612'Method for manufacturing a semiconductor device'20148,816,503'Semiconductor device with buried electrode'20148,766,415'Protective structure'20148,753,982'Method for producing a connection region on a side wall of a semiconductor body'20148,709,831'Integrated circuits with magnetic core inductors and methods of fabrications thereof'20148,575,037'Method for fabricating a cavity structure, for fabricating a cavity structure for a semiconductor structure and a semiconductor microphone fabricated by the same'20138,531,011'Protective structure having a semiconductor substrate'20138,470,612'Integrated circuits with magnetic core inductors and methods of fabrications thereof'20138,436,707'System and method for integrated inductor'20138,263,481'Method for producing a protective structure'20128,163,629'Metallization for chip scale packages in wafer level packaging'20127,888,232'Method for producing a protective structure'20117,816,791'Bonding pad for contacting a device'20107,763,520'Capacitor device with a layer structure disposed in a meander-shaped manner'20107,456,094'LDMOS transistor'20087,253,492'Semiconductor structure with via structure'20077,221,034'Semiconductor structure including vias'20077,176,128'Method for fabrication of a contact structure'20077,176,546'Diode circuit and method of producing a diode circuit'20077,119,399'LDMOS transistor'20067,030,457'Capacitor and method for producing a capacitor'20066,873,242'Magnetic component'20056,798,042'Pin diode and method for fabricating the diode'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004–2021Patents assigned to INFINEON TECHNOLOGIES AG (46)· patent assignee history
2004Based in Mnchen, DE· patent location history
2005–2020Based in Munich, DE· patent location history
2006–2018Based in München, DE· patent location history
2010–2021Based in Pettendorf, DE· patent location history
2012–2017Patents assigned to AHRENS CARSTEN (12)· patent assignee history
2012–2017Patents assigned to SCHMENN ANDRE (3)· patent assignee history
2012–2016Patents assigned to SCHUDERER BERTHOLD (3)· patent assignee history
2014–2015Patents assigned to INFINEON TECHNOLOGIES AUSTRIA (4)· patent assignee history
2020Based in Regensburg, DE· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INFINEON TECHNOLOGIES AG | 46 | 2004–2021 |
| AHRENS CARSTENself | 12 | 2012–2017 |
| INFINEON TECHNOLOGIES AUSTRIA | 4 | 2014–2015 |
| SCHMENN ANDRE | 3 | 2012–2017 |
| SCHUDERER BERTHOLD | 3 | 2012–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Pettendorf, DE | 38 | 2010–2021 |
| München, DE | 6 | 2006–2018 |
| Munich, DE | 5 | 2005–2020 |
| Regensburg, DE | 2 | 2020 |
| Mnchen, DE | 1 | 2004 |