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Inventor

Na Bai

Inventor
Jiangsu, CN

Overview

5→
Patents
2013–2016
Patent span
Physics
Primary field (CPC G)

Patents· 5 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores50%
H03KPulse technique25%
H01LSemiconductor devices13%
H10BElectronic memory devices13%
PatentTitleYear
9,236,115'Circuit for enhancing robustness of sub-threshold SRAM memory cell'20168,922,265'Noise current compensation circuit'20148,803,580'Power-on-reset (POR) circuit with zero steady-state current consumption and stable pull-up voltage'20148,559,213'Sub-threshold memory cell circuit with high density and high robustness'20138,345,468'Capacity and density enhancement circuit for sub-threshold memory unit array'2013

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2013–2016Patents assigned to UNIV SOUTHEAST (5)· patent assignee history
2013–2014Patents assigned to BAI NA (3)· patent assignee history
2013Patents assigned to HU CHEN (2)· patent assignee history
2013Patents assigned to LI JIE (2)· patent assignee history
2013–2014Patents assigned to SHI LONGXING (2)· patent assignee history
2013–2016Based in Jiangsu, CN· patent location history
2014Based in Wuxi, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
UNIV SOUTHEAST52013–2016
BAI NAself32013–2014
HU CHEN22013
LI JIE22013
SHI LONGXING22013–2014
Locations
LocationPatentsSpan
Jiangsu, CN42013–2016
Wuxi, CN12014