Inventor
Keith Doran Weeks
Inventor
Gilbert, AZ, US
Overview
Patents· 22 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1035%
H10DInorganic electric semiconductor devices23%
H01LSemiconductor devices18%
C23CCoating metallic material16%
C30BSingle-crystal growth7%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
PatentTitleYear
11,075,078Method for making a semiconductor device including a superlattice within a recessed etch202110,811,498Method for making superlattice structures with reduced defect densities202010,727,049Method for making a semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlattice202010,566,191Semiconductor device including superlattice structures with reduced defect densities202010,468,245Semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlattice201910,109,479Method of making a semiconductor device with a buried insulating layer formed by annealing a superlattice20189,490,325'Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same'20169,324,811'Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same'20169,312,131'Selective epitaxial formation of semiconductive films'20169,099,423'Doped semiconductor films and processing'20158,278,176'Selective epitaxial formation of semiconductor films'20128,088,223'System for control of gas injectors'20127,964,513'Method to form ultra high quality silicon-containing compound layers'20117,901,968'Heteroepitaxial deposition over an oxidized surface'20117,816,236'Selective deposition of silicon-containing films'20107,651,953'Method to form ultra high quality silicon-containing compound layers'20107,648,690'Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition'20107,438,760'Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition'20087,297,641'Method to form ultra high quality silicon-containing compound layers'20077,294,582'Low temperature silicon compound deposition'20077,029,995'Methods for depositing amorphous materials and using them as templates for epitaxial films by solid phase epitaxy'20067,005,160'Methods for depositing polycrystalline films with engineered grain structures'2006Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2006–2016Patents assigned to ASM INC (12)· patent assignee history
2006–2011Based in Mesa, AZ, US· patent location history
2007–2016Based in Gilbert, AZ, US· patent location history
2012–2016Patents assigned to BAUER MATTHIAS (2)· patent assignee history
2012–2016Patents assigned to WEEKS KEITH DORAN (2)· patent assignee history
2015–2016Patents assigned to ASM IP HOLDING BV (3)· patent assignee history
2016–2021Based in Chandler, AZ, US· patent location history
2018–2021Patents assigned to ATOMERA INC (6)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| ASM INC | 12 | 2006–2016 |
| ATOMERA INC | 6 | 2018–2021 |
| ASM IP HOLDING BV | 3 | 2015–2016 |
| BAUER MATTHIAS | 2 | 2012–2016 |
| WEEKS KEITH DORANself | 2 | 2012–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Gilbert, AZ, US | 9 | 2007–2016 |
| Chandler, AZ, US | 8 | 2016–2021 |
| Mesa, AZ, US | 5 | 2006–2011 |