Inventor

Wei-Yu Yen

Inventor

Taichung, TW

Overview

25→

Patents

2013–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 25 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Hprimary

H10HInorganic light-emitting semiconductor devices having potential barriers49%

H01LSemiconductor devices33%

H10DInorganic electric semiconductor devices4%

LOC134%

H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light2%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation2%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%

Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution2%

PatentTitleYear

10,930,831Light emitting chip and fabrication method thereof2021 10,541,512Surface emitting laser luminescent diode structure2020 10,263,093Optoelectronic semiconductor device and fabrication method thereof2019 10,243,108Light emitting diode having continuous electrode structure2019 9,893,254'Structure of high temperature resistant reflecting layer of light-emitting diode'2018 9,502,621'High energy invisible light light emitting diode having safety indication'2016 9,401,465'Light emitting diode having mirror protection layer and method for manufacturing mirror protection layer'2016 9,263,641'Light emitting diodes'2016 9,224,911'Method for separating light-emitting diode from a substrate'2015 9,214,601'Electroluminescent and photoluminescent multiband white light emitting diode'2015 9,196,798'Semiconductor light-emitting device and fabricating method thereof'2015 D0730303'LED chip'2015 D0729752'LED chip'2015 8,896,007'Semiconductor light-emitting device and fabricating method thereof'2014 8,884,323'Semiconductor light-emitting device'2014 8,816,379'Reflection curved mirror structure of a vertical light-emitting diode'2014 8,766,303'Light-emitting diode with a mirror protection layer'2014 8,754,439'Light-emitting element and the manufacturing method thereof'2014 8,748,928'Continuous reflection curved mirror structure of a vertical light-emitting diode'2014 8,716,740'Electrode structure for an LED'2014 8,704,252'Light emitting device'2014 8,552,457'Thermal stress releasing structure of a light-emitting diode'2013 8,546,831'Reflection convex mirror structure of a vertical light-emitting diode'2013 8,519,430'Optoelectronic device and method for manufacturing the same'2013 8,344,392'Light-emitting element and the manufacturing method thereof'2013

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2013–2021Patents assigned to HIGH POWER OPTO INC (21)· patent assignee history

2013–2016Patents assigned to YEN WEI-YU (7)· patent assignee history

2013–2016Patents assigned to CHANG CHIH-SUNG (5)· patent assignee history

2013–2016Patents assigned to CHEN FU-BANG (5)· patent assignee history

2013–2014Patents assigned to EPISTAR CORP (4)· patent assignee history

2013–2021Based in Taichung, TW· patent location history

2013–2014Based in Hsinchu, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
HIGH POWER OPTO INC	21	2013–2021
YEN WEI-YUself	7	2013–2016
CHANG CHIH-SUNG	5	2013–2016
CHEN FU-BANG	5	2013–2016
EPISTAR CORP	4	2013–2014

Locations

Location	Patents	Span
Taichung, TW	21	2013–2021
Hsinchu, TW	4	2013–2014