Inventor
Takayuki Gomi
Inventor
Tokyo, JP
Overview
Patents· 30 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices69%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests21%
B65HHandling thin or filamentary material, e.g. sheets, webs, cables2%
H01FMagnets2%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h102%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
PatentTitleYear
6,977,426'Semiconductor device including high speed transistors and high voltage transistors disposed on a single substrate'20056,596,600'Integrated injection logic semiconductor device and method of fabricating the same'20036,222,250'Bipolar transistor device and method for manufacturing the same'20016,034,402'Semiconductor device'20006,008,524'Integrated injection logic semiconductor device'19995,976,940'Method of making plurality of bipolar transistors'19995,915,186'Method of manufacturing heterojunction bipolar device having Si.sub.1-x Ge.sub.x base'19995,912,479'Heterojunction bipolar semiconductor device'19995,893,743'Process of fabricating semiconductor device'19995,885,880'Bipolar transistor device and method for manufacturing the same'19995,861,640'Mesa bipolar transistor with sub base layer'19995,858,850'Process of fabricating integrated heterojunction bipolar device and MIS capacitor'19995,856,228'Manufacturing method for making bipolar device having double polysilicon structure'19995,846,867'Method of producing Si-Ge base heterojunction bipolar device'19985,830,799'Method for forming embedded diffusion layers using an alignment mark'19985,786,258'Method of making an SOI transistor'19985,783,472'Method of making an SOI transistor'19985,643,806'Manufacturing method for making bipolar device'19975,629,217'Method and apparatus for SOI transistor'19975,622,887'Process for fabricating BiCMOS devices including passive devices'19975,580,797'Method of making SOI Transistor'19965,548,156'Method and apparatus for SOI transistor'19965,541,124'Method for making bipolar transistor having double polysilicon structure'19965,414,291'Semiconductor device and process for fabricating the same'19955,391,503'Method of forming a stacked semiconductor device wherein semiconductor layers and insulating films are sequentially stacked and forming openings through such films and etchings using one of the insulating films as a mask'19955,389,561'Method for making SOI type bipolar transistor'19955,163,178'Semiconductor device having enhanced impurity concentration profile'19925,010,026'Process for making bipolar transistor'19914,994,881'Bipolar transistor'19914,844,312'Apparatus for controlling traverse position of running strip'1989Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1989Patents assigned to KITAMURA KIDEN KK (1)· patent assignee history
1989Based in Chino, JP· patent location history
1991–2005Patents assigned to SONY CORP (29)· patent assignee history
1991–2005Based in Tokyo, JP· patent location history
1996–1998Based in Kanagawa, JP· patent location history
2001Based in Toyko, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SONY CORP | 29 | 1991–2005 |
| KITAMURA KIDEN KK | 1 | 1989 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 23 | 1991–2005 |
| Kanagawa, JP | 5 | 1996–1998 |
| Toyko, JP | 1 | 2001 |
| Chino, JP | 1 | 1989 |