Inventor
Kyoji Oguro
Inventor
Niigata, JP
Overview
Patents· 14 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C01Bprimary
C01BNon-metallic elements31%
C23CCoating metallic material22%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry8%
Y02PClimate change mitigation technologies in the production or processing of goods8%
C30BSingle-crystal growth6%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
B08BCleaning in general3%
C03BManufacture, shaping, or supplementary processes3%
C22CAlloys3%
F26BDrying solid materials or objects by removing liquid therefrom3%
PatentTitleYear
10,366,882System for producing polycrystalline silicon, apparatus for producing polycrystalline silicon, and process for producing polycrystalline silicon20199,562,289'Carbon electrode with slidable contact surfaces and apparatus for manufacturing polycrystalline silicon rod'20179,193,596'Reactor for producing polycrystalline silicon, system for producing polycrystalline silicon, and process for producing polycrystalline silicon'20159,126,242'Method for cleaning bell jar, method for producing polycrystalline silicon, and apparatus for drying bell jar'20159,017,482'System for producing polycrystalline silicon, apparatus for producing polycrystalline silicon, and process for producing polycrystalline silicon'20158,793,853'Core wire holder for producing polycrystalline silicon and method for producing polycrystalline silicon'20148,328,935'Method of manufacturing polycrystalline silicon rod'20128,293,076'Method for producing trichlorosilane and method for producing polycrystalline silicon'20127,790,132'Method for producing trichlorosilane and method for producing polycrystalline silicon'20107,691,356'Method for producing trichlorosilane'20107,691,357'Method for producing polycrystalline silicon'20106,071,349'Gas supplying apparatus and vapor-phase growth plant'20005,693,189'Method and apparatus for supply of liquid raw material gas'19975,310,531'Polycrystalline silicon rod for floating zone method and process for making the same'1994Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1994Based in Annaka, JP· patent location history
1997Based in Gunma, JP· patent location history
2000Based in Nishishirakawa, JP· patent location history
2010–2019Patents assigned to SHINETSU CHEMICAL CO (11)· patent assignee history
2010–2017Based in Niigata, JP· patent location history
2012–2017Patents assigned to OGURO KYOJI (7)· patent assignee history
2012–2017Patents assigned to NETSU SHIGEYOSHI (6)· patent assignee history
2012–2017Patents assigned to KUROTANI SHINICHI (4)· patent assignee history
2014–2017Patents assigned to KUME FUMITAKA (4)· patent assignee history
2014–2019Based in Joetsu-shi, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SHINETSU CHEMICAL CO | 11 | 2010–2019 |
| OGURO KYOJIself | 7 | 2012–2017 |
| NETSU SHIGEYOSHI | 6 | 2012–2017 |
| KUME FUMITAKA | 4 | 2014–2017 |
| KUROTANI SHINICHI | 4 | 2012–2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Niigata, JP | 9 | 2010–2017 |
| Joetsu-shi, JP | 2 | 2014–2019 |
| Nishishirakawa, JP | 1 | 2000 |
| Gunma, JP | 1 | 1997 |
| Annaka, JP | 1 | 1994 |