Inventor

CHERN-YOW HSU

Inventor

TW

Overview

2021–2026

Patent span

Electricity

Primary field (CPC H)

Patents· 53 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary

H01LSemiconductor devices20%

H10NElectric solid-state devices not otherwise provided for19%

H10BElectronic memory devices18%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1018%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%

H10DInorganic electric semiconductor devices9%

G11CStatic stores3%

H10HInorganic light-emitting semiconductor devices having potential barriers2%

PatentTitleYear

12,538,711Method for forming a hard mask with a tapered profile2026 12,501,842Non-volatile memory device and manufacturing technology2025 12,501,625Hard mask for MTJ patterning2025 12,446,473Bottom electrode via and conductive barrier design to eliminate electrical short in memory devices2025 12,446,238Semiconductor device and method of forming the same2025 12,439,837Via structure and methods of forming the same2025 12,349,602Bottom electrode via and conductive barrier design to eliminate electrical short in memory devices2025 12,274,072Semiconductor memory device and method for fabricating the same2025 12,262,643Techniques for MRAM MTJ top electrode connection2025 12,245,528Memory device with composite spacer2025 12,165,996Bond pad with enhanced reliability2024 12,132,039Mask transfer method (and related apparatus) for a bumping process2024 12,133,470Semiconductor structure and method of forming the same2024 12,114,576Method for forming a hard mask with a tapered profile2024 12,087,826Method for forming a semiconductor structure2024 12,010,933Via structure and methods of forming the same2024 11,973,149Semiconductor device and method of forming the same2024 11,943,934Hard mask for MTJ patterning2024 11,910,620Magnetic tunnel junction device with residue-protection sidewall spacer and the method for forming a magnetic tunnel junction device with residue-protection sidewall spacer2024 11,856,750Semiconductor arrangement with capacitor2023 11,855,127Semiconductor structure and method for forming the same2023 11,844,285Magnetic tunnel junction memory cell with a buffer-layer and methods for forming the same2023 11,839,161Semiconductor structure2023 11,824,022Bond pad with enhanced reliability2023 11,805,660Semiconductor structure2023 11,800,822Memory device with composite spacer2023 11,785,861Semiconductor structure and method of manufacturing the same2023 11,765,980Method for forming a hard mask with a tapered profile2023 11,735,550Bump structure to prevent metal redeposit and to prevent bond pad consumption and corrosion2023 11,721,683Mask transfer method (and related apparatus) for a bumping process2023 11,683,990Techniques for MRAM MTJ top electrode connection2023 11,575,052Semiconductor device and method of forming the same2023 11,569,296Semiconductor structure2023 11,532,697Semiconductor structure and method for forming the same2022 11,515,473Semiconductor device including a magnetic tunneling junction (MTJ) device2022 11,508,782Hard mask for MTJ patterning2022 11,502,245Magnetoresistive random access memory cell and fabricating the same2022 11,495,743Non-volatile memory device and manufacturing technology2022 11,489,115VIA structure and methods of forming the same2022 11,476,337Method for forming a semiconductor structure2022 11,430,956RRAM cell structure with conductive etch-stop layer2022 11,367,832Method of making magnetoresistive random access memory device2022 11,362,265Semiconductor structure and method of manufacturing the same2022 11,342,378Magnetic tunnel junction device with residue-protection sidewall spacer and the method for forming a magnetic tunnel junction device with residue-protection sidewall spacer2022 11,302,663Film scheme for bumping2022 11,264,368Mask transfer method (and related apparatus) for a bumping process2022 11,258,007Reversed stack MTJ2022 11,244,914Bond pad with enhanced reliability2022 11,227,993Device with composite spacer and method for manufacturing the same2022 11,222,896Semiconductor arrangement with capacitor and method of fabricating the same2022 11,211,352Bump structure to prevent metal redeposit and to prevent bond pad consumption and corrosion2021 11,164,836Film scheme for bumping2021 11,158,797RRAM cell structure with conductive etch-stop layer2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (53)· patent assignee history

2021–2026Based in TW· patent location history

2024Patents assigned to TAIWAN SEMICONDUCTOR MFG CPMPANY LTD (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG CO LTD	53	2021–2026
TAIWAN SEMICONDUCTOR MFG CPMPANY LTD	1	2024

Locations

Location	Patents	Span
TW	53	2021–2026