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Inventor

Tien-Chih Chang

Inventor
Taipei, TW

Overview

6→
Patents
2005–2013
Patent span
Electricity
Primary field (CPC H)

Patents· 6 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices50%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1050%
PatentTitleYear
8,564,018'Relaxed silicon germanium substrate with low defect density'20137,357,838'Relaxed silicon germanium substrate with low defect density'20087,351,994'Noble high-k device'20087,105,393'Strained silicon layer fabrication with reduced dislocation defect density'20067,012,009'Method for improving the electrical continuity for a silicon-germanium film across a silicon/oxide/polysilicon surface using a novel two-temperature process'20066,878,610'Relaxed silicon germanium substrate with low defect density'2005

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2005–2013Patents assigned to TAIWAN SEMICONDUCTOR MFG (6)· patent assignee history
2005–2013Based in Taipei, TW· patent location history
2013Patents assigned to CHANG TIEN-CHIH (1)· patent assignee history
2013Patents assigned to CHEN SHIH-CHANG (1)· patent assignee history
2013Patents assigned to HU CHENMING (1)· patent assignee history
2013Patents assigned to HUANG CHIEN-CHAO (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG62005–2013
CHANG TIEN-CHIHself12013
CHEN SHIH-CHANG12013
HU CHENMING12013
HUANG CHIEN-CHAO12013
Locations
LocationPatentsSpan
Taipei, TW62005–2013