Inventor
Dong Ha Jung
Inventor
Gyeonggi-do, KR
Overview
Patents· 49 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1018%
H10DInorganic electric semiconductor devices17%
H10NElectric solid-state devices not otherwise provided for11%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
D06FLaundering, drying, ironing, pressing or folding textile articles8%
H01LSemiconductor devices8%
H10BElectronic memory devices8%
F16FSprings5%
G11CStatic stores4%
Y10TTechnical subjects covered by former us classification3%
PatentTitleYear
10,760,195Washing machine202010,635,517Semiconductor devices comparing error codes and semiconductor systems including the same202010,501,881Damping device and washing machine including the same201910,217,934Method for manufacturing magnetic memory cells201910,177,308Method for manufacturing magnetic memory cells20199,994,988Balancer of washing machine20189,809,916'Washing machine with balancer and control method thereof'20179,803,308'Balancer and washing machine having the same'20179,790,631'Balancer and washing machine having the same'20179,765,466'Balancer and washing machine having the same'20179,719,202'Balancer and washing machine having the same'20179,637,854'Washing machine with balancer and control method thereof'20179,548,448'Memory device with increased separation between memory elements'20179,487,899'Balancer of washing machine'20169,166,154'MTJ stack and bottom electrode patterning process with ion beam etching using a single mask'20159,123,388'Disk drive including a noise reduction unit and method of reducing noise by using the disk drive'20159,123,575'Semiconductor memory device having increased separation between memory elements'20159,070,869'Fabrication method for high-density MRAM using thin hard mask'20159,029,822'High density resistive memory having a vertical dual channel transistor'20158,975,089'Method for forming MTJ memory element'20158,962,349'Method of manufacturing magnetic tunnel junction memory element'20158,883,520'Redeposition control in MRAM fabrication process'20148,836,061'Magnetic tunnel junction with non-metallic layer adjacent to free layer'20148,772,888'MTJ MRAM with stud patterning'20148,726,301'Cover for an optical disc drive and optical disc drive having the same'20148,685,757'Method for fabricating magnetic tunnel junction'20148,574,928'MRAM fabrication method with sidewall cleaning'20138,519,539'Metal wire for a semiconductor device formed with a metal layer without voids therein and a method for forming the same'20138,338,951'Metal line of semiconductor device having a diffusion barrier with an amorphous TaBN layer and method for forming the same'20128,278,218'Electrical conductor line having a multilayer diffusion barrier for use in a semiconductor device and method for forming the same'20128,159,069'Metal line of semiconductor device without production of high resistance compound due to metal diffusion and method for forming the same'20128,080,472'Metal line having a MoxSiy/Mo diffusion barrier of semiconductor device and method for forming the same'20118,053,895'Metal line of semiconductor device having a multilayer molybdenum diffusion barrier and method for forming the same'20118,043,962'Metal wire for a semiconductor device formed with a metal layer without voids therein and a method for forming the same'20118,008,708'Metal line of semiconductor device having a diffusion barrier and method for forming the same'20118,008,774'Multi-layer metal wiring of semiconductor device preventing mutual metal diffusion between metal wirings and method for forming the same'20117,977,793'Metal line of semiconductor device having a diffusion barrier with an amorphous TaBN layer and method for forming the same'20117,902,065'Multi-layered metal line having an improved diffusion barrier of a semiconductor device and method for forming the same'20117,875,979'Metal line of semiconductor device having a diffusion barrier including CRxBy and method for forming the same'20117,875,978'Metal line having a multi-layered diffusion layer in a semiconductor device and method for forming the same'20117,872,351'Multi-layered metal line of semiconductor device for preventing diffusion between metal lines and method for forming the same'20117,855,456'Metal line of semiconductor device without production of high resistance compound due to metal diffusion and method for forming the same'20107,820,546'Method for manufacturing semiconductor device preventing loss of junction region'20107,777,336'Metal line of semiconductor device and method for forming the same'20107,741,216'Metal line of semiconductor device and method for forming the same'20107,638,425'Metal line of semiconductor device having a diffusion barrier including CRxBy and method for forming the same'20097,629,248'Multi-layered metal line of semiconductor device for preventing diffusion between metal lines and method for forming the same'20097,531,902'Multi-layered metal line of semiconductor device having excellent diffusion barrier and method for forming the same'20097,524,761'Method for manufacturing semiconductor device capable of reducing parasitic bit line capacitance'2009Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2009–2013Patents assigned to HYNIX SEMICONDUCTOR INC (22)· patent assignee history
2009–2019Based in Gyeonggi-do, KR· patent location history
2009–2013Based in Kyungki-do, KR· patent location history
2011–2014Patents assigned to JUNG DONG HA (9)· patent assignee history
2011–2013Patents assigned to KIM BAEK MANN (5)· patent assignee history
2013–2019Patents assigned to AVALANCHE TECHNOLOGY INC (13)· patent assignee history
2013–2019Based in Pleasanton, CA, US· patent location history
2014–2020Based in Yongin-si, KR· patent location history
2016–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (10)· patent assignee history
2017Based in Seongnam-si, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HYNIX SEMICONDUCTOR INC | 22 | 2009–2013 |
| AVALANCHE TECHNOLOGY INC | 13 | 2013–2019 |
| SAMSUNG ELECTRONICS CO LTD | 10 | 2016–2020 |
| JUNG DONG HAself | 9 | 2011–2014 |
| KIM BAEK MANN | 5 | 2011–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Gyeonggi-do, KR | 17 | 2009–2019 |
| Pleasanton, California, US | 13 | 2013–2019 |
| Yongin-si, KR | 8 | 2014–2020 |
| Kyungki-do, KR | 7 | 2009–2013 |
| Seongnam-si, KR | 2 | 2017 |