Inventor

YU-DER CHIH

Inventor
TW

Overview

112→
Patents
2021–2026
Patent span
Physics
Primary field (CPC G)

Patents· 112 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores45%
G06FElectric digital data processing16%
H10BElectronic memory devices8%
H10NElectric solid-state devices not otherwise provided for6%
H03KPulse technique5%
G06NComputing arrangements based on specific computational models4%
H01LSemiconductor devices4%
G05FSystems for regulating electric or magnetic variables3%
H10DInorganic electric semiconductor devices3%
H03MCoding2%
PatentTitleYear
12,585,296Power regulation system for memory operation including a temperature compensation circuit for reference and bias voltage generation202612,562,224Resistive memory with enhanced redundancy writing202612,555,620Memory device202612,525,313Method for testing and repairing memory device202612,494,250Resistive random access memory based one-time-programmable memory devices202512,488,821Semiconductor device including reference cells and a method of operating thereof202512,426,517Resistive memory device with protrusion covered with resistance changing element and method for manufacturing the same202512,424,279Memory cell including programmable resistors with transistor components202512,399,684Low power adder tree structure202512,399,432Semiconductor fabrication apparatus and method of using the same202512,380,948RRAM voltage compensation202512,367,932Memory device in which latch is coupled to source line and method of operation202512,354,635MRAM reference current202512,348,626Integrated circuit (IC) signatures with random number generator and one-time programmable device202512,340,160Memory cell array circuit and method of forming the same202512,340,839Memory device and system202512,322,441Resistive random access memory device202512,322,442Resistive memory with low voltage operation202512,277,319SRAM-based cell for in-memory computing and hybrid computations/storage memory architecture202512,259,783Semiconductor device and operation method thereof202512,248,331Low-dropout (LDO) regulator with a feedback circuit202512,243,586Method for reading memory202512,243,592One time programmable memory202512,229,003Memory error detection and correction202512,230,323Memory cell array circuit and method of forming the same202512,217,819Computing device, memory controller, and method for performing an in-memory computation202512,211,579Memory sense amplifier trimming202512,205,017Method and apparatus for defect-tolerant memory-based artificial neural network202512,184,795PUF method and structure202412,176,063Computing-in-memory architecture202412,164,882In-memory computation circuit and method202412,164,317Low-dropout voltage regulator circuit202412,165,732Sense amplifier202412,165,704Memory device with write pulse trimming202412,165,722Non-volatile memory circuit and method202412,165,705Memory cell array circuit and method of forming the same202412,147,784Compute in memory202412,080,375Circuits and methods for compensating a mismatch in a sense amplifier202412,073,916Back-up and restoration of register data202412,051,466Memory cell including programmable resistors with transistor components202412,041,860Resistive memory device and method for manufacturing with protrusion of electrode202412,026,404Memory device for scheduling maximum number of memory macros write operations at re-arranged time intervals202412,027,205Resistive memory with low voltage operation202412,009,029System and method applied with computing-in-memory202411,984,162Hybrid self-tracking reference circuit for RRAM cells202411,978,518Sense amplifier control202411,973,502Latch202411,962,693Integrated circuit (IC) signatures with random number generator and one-time programmable device202411,961,546MRAM reference current202411,943,936Semiconductor device and method of manufacturing the same202411,922,108Method of forming a memory cell array circuit202411,923,036Memory sense amplifier trimming202411,915,754Resistive random access memory device202411,915,752Resistive memory with enhanced redundancy writing202411,848,040Memory device and reference circuit thereof202311,797,034Low-dropout voltage regulation circuit202311,797,831Method and apparatus for defect-tolerant memory based artificial neural network202311,791,006Non-volatile memory circuit202311,783,873Circuits and methods for compensating a mismatch in a sense amplifier202311,783,870Sense amplifier202311,762,732Memory error detection and correction202311,755,410Systems and methods for correcting data errors in memory202311,742,021Memory device with write pulse trimming202311,742,024Memory device comprising source line coupled to multiple memory cells and method of operation202311,735,238Memory device202311,735,263Memory cell array circuit and method of forming the same202311,720,130On-chip power regulation system for MRAM operation202311,714,717Method of correcting errors in a memory array and method of screening weak bits in the same202311,693,560SRAM-based cell for in-memory computing and hybrid computations/storage memory architecture202311,688,436Sense amplifier and operating method for non-volatile memory with reduced need on adjusting offset to compensate the mismatch202311,681,468Memory device for scheduling maximum number of memory macros write operations at re-arranged time intervals202311,651,826One time programmable memory202311,646,079Memory cell including programmable resistors with transistor components202311,641,193Latch202311,636,884Back-up and restoration of register data202311,636,896Memory cell array circuit and method of forming the same202311,621,037Memory with symmetric read current profile202311,621,040System and method applied with computing-in-memory202311,609,815Semicoductor device and operation method thereof202311,605,427Memory device with write pulse trimming202311,581,027Memory sense amplifier trimming202311,557,344Resistive random access memory device202311,556,414Memory device202311,528,135Integrated circuit (IC) signatures with random number generator and one-time programmable device202211,495,294Hybrid self-tracking reference circuit for RRAM cells202211,469,745Latch202211,461,623Method and apparatus for defect-tolerant memory-based artificial neural network202211,450,395Non-volatile memory circuit and method202211,450,364Computing-in-memory architecture202211,442,482Low-dropout (LDO) regulator with a feedback circuit202211,429,482Systems and methods for correcting data errors in memory202211,393,512Memory device202211,380,371Sense amplifier and operating method for non-volatile memory with reduced need on adjusting offset to compensate the mismatch202211,373,706Memory circuit, method, and electronic device for implementing ternary weight of neural cell network202211,373,690Circuits and methods for compensating a mismatch in a sense amplifier202211,367,468Sense amplifier202211,327,860Memory device and methods for programming and reading memory device202211,309,022RRAM voltage compensation202211,294,764Method of correcting errors in a memory array and method of screening weak bits in the same202211,295,792Back-up and restoration of register data202211,276,469One time programmable memory202211,264,109Memory device202211,250,908Segmented reference trimming for memory arrays202211,232,836Resistive random access memory device202211,227,640Memory sense amplifier trimming202211,211,106Memory device and reference circuit thereof202111,211,142Memory repair scheme202111,204,826Memory error detection and correction202111,151,296Memory cell array circuit202111,145,388Memory device and operating method using the same202111,137,785On-chip power regulation system for MRAM operation202111,139,017Self-activated bias generator2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (112)· patent assignee history
2021–2026Based in TW· patent location history
2025Patents assigned to TAIWAIN SEMICONDUCTOR MFG COMPANY LTD (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG CO LTD1122021–2026
TAIWAIN SEMICONDUCTOR MFG COMPANY LTD12025
Locations
LocationPatentsSpan
TW1122021–2026