Inventor
HSIEN-FENG LIAO
Inventor
TW
Overview
Patents· 7 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices50%
H02HEmergency protective circuit arrangements40%
H01LSemiconductor devices10%
PatentTitleYear
12,501,717Semiconductor structure with a gate and a shielding structure202512,444,935Electrostatic discharge protection circuit202512,419,115Electrostatic discharge protection circuit202512,342,629Electrostatic discharge protection device202511,811,222Electrostatic discharge protection circuit202311,569,657Protection circuits202311,545,481Electrostatic discharge protection devices2023Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2023–2025Patents assigned to VANGUARD INT SEMICONDUCT CORP (7)· patent assignee history
2023–2025Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| VANGUARD INT SEMICONDUCT CORP | 7 | 2023–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 7 | 2023–2025 |