Inventor

Michael Eugene Givens

Inventor
Scottsdale, AZ, US

Overview

33→
Patents
1994–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 33 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices24%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1024%
H10DInorganic electric semiconductor devices22%
C23CCoating metallic material16%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
H10BElectronic memory devices3%
H10NElectric solid-state devices not otherwise provided for2%
B05DProcesses for applying fluent materials to surfaces, in general1%
G11CStatic stores1%
H01JElectric discharge tubes or discharge lamps1%
PatentTitleYear
11,101,370Method of forming a germanium oxynitride film202110,865,475Deposition of metal borides and silicides202010,854,444Sulfur-containing thin films202010,818,758Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures202010,734,497Methods for forming a semiconductor device structure and related semiconductor device structures202010,720,331Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures202010,665,452Source/drain performance through conformal solid state doping202010,636,889Titanium aluminum and tantalum aluminum thin films202010,607,895Method for forming a semiconductor device structure comprising a gate fill metal202010,553,424Sulfur-containing thin films202010,490,475Methods for semiconductor passivation by nitridation after oxide removal201910,458,018Structures including metal carbide material, devices including the structures, and methods of forming same201910,410,943Method for passivating a surface of a semiconductor and related systems201910,367,080Method of forming a germanium oxynitride film201910,229,833Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures201910,199,213Sulfur-containing thin films201910,087,522Deposition of metal borides201810,032,628Source/drain performance through conformal solid state doping201810,002,936Titanium aluminum and tantalum aluminum thin films20189,981,286Selective formation of metal silicides20189,911,676'System and method for gas-phase passivation of a semiconductor surface'20189,905,492'System and method for gas-phase passivation of a semiconductor surface'20189,741,815'Metal selenide and metal telluride thin films for semiconductor device applications'20179,721,786'Sulfur-containing thin films'20179,711,350'Methods for semiconductor passivation by nitridation'20179,711,396'Method for forming metal chalcogenide thin films on a semiconductor device'20179,558,931'System and method for gas-phase sulfur passivation of a semiconductor surface'20179,478,419'Sulfur-containing thin films'20169,461,134'Method for forming source/drain contact structure with chalcogen passivation'20169,385,164'Method of making a resistive random access memory device with metal-doped resistive switching layer'20169,245,742'Sulfur-containing thin films'20168,956,939'Method of making a resistive random access memory device'20155,354,694'Method of making highly doped surface layer for negative electron affinity devices'1994

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1994Patents assigned to ITT (1)· patent assignee history
1994Based in Roanoke, VA, US· patent location history
2015–2021Patents assigned to ASM IP HOLDING BV (32)· patent assignee history
2015Patents assigned to ASM INT (1)· patent assignee history
2015–2020Based in Phoenix, AZ, US· patent location history
2016–2021Based in Scottsdale, AZ, US· patent location history
2019Based in Helsinki, FI· patent location history
2020Patents assigned to ASM IP HOLDINGS B V (3)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
ASM IP HOLDING BV322015–2021
ASM IP HOLDINGS B V32020
ASM INT12015
ITT11994
Locations
LocationPatentsSpan
Scottsdale, AZ, US172016–2021
Phoenix, AZ, US142015–2020
Helsinki, FI12019
Roanoke, Virginia, US11994