Inventor
Daniel F. Feezell
Inventor
Albuquerque, NM, US
Overview
Patents· 35 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
B82Yprimary
B82YSpecific uses or applications of nanostructures18%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light17%
H01LSemiconductor devices15%
H10HInorganic light-emitting semiconductor devices having potential barriers13%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
H10DInorganic electric semiconductor devices7%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation3%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution3%
Y02PClimate change mitigation technologies in the production or processing of goods3%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
PatentTitleYear
11,002,758Rugged, single crystal wide-band-gap-material scanning-tunneling-microscopy/lithography tips202110,840,092Atomic force microscopy based on nanowire tips for high aspect ratio nanoscale metrology/confocal microscopy2020RE047241Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors201910,141,418Device with heteroepitaxial structure made using a growth mask201810,043,946Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening20189,773,704'Method for the reuse of gallium nitride epitaxial substrates'20179,722,398'Optical device structure using GaN substrates for laser applications'20179,640,947'Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser'20179,531,164'Optical device structure using GaN substrates for laser applications'20169,406,843'Methods and devices for light extraction from a Group III-nitride volumetric LED using surface and sidewall roughening'20169,396,943'Method for the reuse of gallium nitride epitaxial substrates'20169,257,535'Gate-all-around metal-oxide-semiconductor transistors with gate oxides'20169,147,733'Method for the reuse of gallium nitride epitaxial substrates'20159,142,400'Method of making a heteroepitaxial layer on a seed area'20159,136,673'Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser'20159,076,813'Gate-all-around metal-oxide-semiconductor transistors with gate oxides'20159,071,039'Optical device structure using GaN substrates for laser applications'20159,040,327'Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes'20159,000,466'Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening'20158,866,149'Method for the reuse of gallium nitride epitaxial substrates'20148,847,249'Solid-state optical device having enhanced indium content in active regions'20148,767,787'Integrated laser diodes with quality facets on GaN substrates'20148,728,842'Self-aligned multi-dielectric-layer lift off process for laser diode stripes'20148,686,397'Low droop light emitting diode structure on gallium nitride semipolar substrates'20148,634,442'Optical device structure using GaN substrates for laser applications'20148,618,560'Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors'20138,588,260'Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers'20138,422,525'Optical device structure using miscut GaN substrates for laser applications'20138,299,473'Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors'20128,259,769'Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates'20128,252,662'Method and structure for manufacture of light emitting diode devices using bulk GaN'20128,211,723'Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes'20128,143,148'Self-aligned multi-dielectric-layer lift off process for laser diode stripes'20127,839,903'Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers'20107,480,322'Electrically-pumped (Ga,In,Al)N vertical-cavity surface-emitting laser'2009Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2009–2017Patents assigned to UNIV CALIFORNIA (12)· patent assignee history
2009–2015Based in Santa Barbara, CA, US· patent location history
2012–2016Patents assigned to FEEZELL DANIEL F (14)· patent assignee history
2012–2019Patents assigned to SORAA INC (11)· patent assignee history
2012–2016Patents assigned to RARING JAMES W (9)· patent assignee history
2012–2017Based in Goleta, CA, US· patent location history
2013–2018Based in Fremont, CA, US· patent location history
2014–2017Patents assigned to SORAA LASER DIODE INC (6)· patent assignee history
2014–2021Based in Albuquerque, NM, US· patent location history
2019Based in Freemont, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| FEEZELL DANIEL Fself | 14 | 2012–2016 |
| UNIV CALIFORNIA | 12 | 2009–2017 |
| SORAA INC | 11 | 2012–2019 |
| RARING JAMES W | 9 | 2012–2016 |
| SORAA LASER DIODE INC | 6 | 2014–2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Albuquerque, NM, US | 12 | 2014–2021 |
| Goleta, California, US | 11 | 2012–2017 |
| Santa Barbara, California, US | 6 | 2009–2015 |
| Fremont, California, US | 5 | 2013–2018 |
| Freemont, California, US | 1 | 2019 |