Inventor

Kyoichi Suguro

Inventor
Yokohama, JP

Overview

137→
Patents
1987–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 137 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices28%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests8%
H01JElectric discharge tubes or discharge lamps7%
H10BElectronic memory devices5%
H01LSemiconductor devices3%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices3%
C23CCoating metallic material2%
H10NElectric solid-state devices not otherwise provided for2%
PatentTitleYear
11,006,061Image correction method and image capture device202110,134,612Semiconductor manufacturing apparatus and method of manufacturing semiconductor device201810,008,390Manufacturing method of semiconductor device and semiconductor manufacturing apparatus20189,613,872'Method of manufacturing semiconductor device'20179,478,412'Semiconductor manufacturing apparatus and method of manufacturing semiconductor device'20169,159,769'Semiconductor device, semiconductor device manufacturing method, and semiconductor device manufacturing apparatus'20159,082,961'Method of manufacturing multilayer film'20159,029,247'Manufacturing method of semiconductor device and semiconductor manufacturing apparatus'20158,981,507'Method for manufacturing nonvolatile memory device'20158,836,075'Semiconductor device and fabrication method thereof'20148,754,433'Semiconductor device and method of manufacturing the same'20148,743,601'Non volatile semiconductor memory device and manufacturing method thereof'20148,741,161'Method of manufacturing semiconductor device'20148,716,034'Method of manufacturing magnetic memory'20148,609,014'Template manufacturing method, semiconductor device manufacturing method and template'20138,497,205'Semiconductor device manufacturing method, wiring and semiconductor device'20138,441,073'Semiconductor device and manufacturing method for the same'20138,436,331'Memory device and method for manufacturing same'20138,236,641'Semiconductor device with extension structure and method for fabricating the same'2012RE043521'Method for manufacturing semiconductor device, including multiple heat treatment'20128,211,785'Fabrication method for semiconductor device including flash lamp annealing processes'2012RE043229'Method for manufacturing semiconductor device, including multiple heat treatment'20128,017,466'Semiconductor device and manufacturing method for the same'20117,989,903'Semiconductor device with extension structure and method for fabricating the same'20117,972,960'Method for manufacturing thin film'20117,879,723'Semiconductor device manufacturing method, wiring and semiconductor device'20117,781,848'Semiconductor device with extension structure and method for fabricating the same'20107,772,671'Semiconductor device having an element isolating insulating film'20107,772,076'Method of manufacturing semiconductor device using dummy gate wiring layer'20107,763,553'Manufacturing method of semiconductor device subjected to heat treatment by use of optical heating apparatus'20107,745,073'Method for manufacturing a semiconductor device, stencil mask and method for manufacturing a the same'20107,709,363'Method for manufacturing semiconductor device'20107,709,361'Method for manufacturing a semiconductor device'20107,667,274'Semiconductor device and method of manufacturing the same'20107,635,631'Semiconductor device and manufacturing method for the same'20097,584,011'Method for optimizing an industrial product, system for optimizing an industrial product and method for manufacturing an industrial product'20097,579,231'Semiconductor device and method of manufacturing the same'20097,557,040'Method of manufacture of semiconductor device'20097,521,697'Method for fabricating semiconductor device and equipment for fabricating the same'20097,501,332'Doping method and manufacturing method for a semiconductor device'20097,495,293'Semiconductor device and method for manufacturing the same'20097,459,246'Method for manufacturing a semiconductor device, stencil mask and method for manufacturing a the same'20087,354,819'Method of manufacturing CMOS with silicide contacts'20087,349,750'Method for optimizing an industrial product, system for optimizing an industrial product and method for manufacturing an industrial product'20087,339,247'Semiconductor device manufacturing method and semiconductor manufacturing apparatus'20087,327,013'Stencil mask with charge-up prevention and method of manufacturing the same'20087,300,832'Semiconductor manufacturing method using two-stage annealing'20077,279,405'Fabrication method for semiconductor device and manufacturing apparatus for the same'20077,267,927'Method for fabricating semiconductor device and equipment for fabricating the same'20077,247,867'Ion implanter and method of manufacturing semiconductor device'20077,232,751'Semiconductor device and manufacturing method therefor'20077,208,797'Semiconductor device'20077,179,569'Method for manufacturing a semiconductor device, stencil mask and method for manufacturing the same'20077,157,340'Method of fabrication of semiconductor device'20077,144,794'Ion source, ion implanting device, and manufacturing method of semiconductor devices'20067,145,658'Apparatus and method for evaluating semiconductor material'20067,122,448'Annealing apparatus, annealing method, and manufacturing method of a semiconductor device'20067,098,120'Method of manufacturing semiconductor devices'20067,094,612'Method of controlling a potential difference between a stencil mask and a substrate of semiconductor device'20067,091,114'Semiconductor device and method of manufacturing the same'20067,084,068'Annealing furnace, manufacturing apparatus, annealing method and manufacturing method of electronic device'20067,078,776'Low threshold voltage semiconductor device'20067,060,581'Method for manufacturing a semiconductor device'20067,045,458'Semiconductor and method of manufacturing the same'20067,041,584'Method of manufacturing semiconductor device and the semiconductor device'20067,026,205'Method for manufacturing semiconductor device, including multiple heat treatment'20066,989,316'Semiconductor device and method for manufacturing'20066,939,787'Method for fabricating semiconductor device having gate electrode with polymetal structure of polycrystalline silicon film and metal film'20056,924,518'Semiconductor device and method of manufacturing the same'20056,893,980'Semiconductor device and manufacturing method therefor'20056,881,631'Method of manufacturing semiconductor device'20056,875,986'Ion generation method and filament for ion generation apparatus'20056,825,597'Ion source, ion implanting device, and manufacturing method of semiconductor devices'20046,794,286'Process for fabricating a metal wiring and metal contact in a semicondutor device'20046,770,944'Semiconductor device having counter and channel impurity regions'20046,770,519'Semiconductor manufacturing method using two-stage annealing'20046,770,402'Method for manufacturing a semiconductor device, stencil mask and method for manufacturing the same'20046,767,796'Method of manufacturing semiconductor device and the semiconductor device'20046,737,716'Semiconductor device and method of manufacturing the same'20046,737,724'Semiconductor device and method of manufacturing the same'20046,730,581'Semiconductor device and method of manufacture thereof'20046,720,657'Semiconductor device and method of manufacturing the same'20046,693,023'Ion implantation method and ion implantation equipment'20046,646,268'Ion generation method and filament for ion generation apparatus'20036,614,033'Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes'20036,607,958'Semiconductor device and method of manufacturing the same'20036,586,837'Sputtering target and method of manufacturing a semiconductor device'20036,570,169'Apparatus for manufacturing a semiconductor device and a method for manufacturing a semiconductor device'20036,541,393'Method for fabricating semiconductor device'20036,541,829'Semiconductor device and method of manufacturing the same'20036,482,714'Semiconductor device and method of manufacturing the same'20026,476,454'Semiconductor device and method of manufacturing the same'20026,465,290'Method of manufacturing a semiconductor device using a polymer film pattern'20026,403,452'Ion implantation method and ion implantation equipment'20026,376,888'Semiconductor device and method of manufacturing the same'20026,365,492'Apparatus for manufacturing a semiconductor device and a method for manufacturing a semiconductor device'20026,346,438'Method of manufacturing a semiconductor device'20026,335,534'Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes'20026,335,241'Semiconductor device and manufacturing method thereof'20026,271,573'Semiconductor device with gate structure and method of manufacturing the same'20016,239,441'Apparatus for manufacturing a semiconductor device and a method for manufacturing a semiconductor device'20016,162,741'Semiconductor device and manufacturing method therefor'20006,133,150'Semiconductor device and method for manufacturing the same'20006,100,193'Method of manufacturing a semiconductor device'20006,090,699'Method of making a semiconductor device'20006,033,537'Sputtering target and method of manufacturing a semiconductor device'20005,989,988'Semiconductor device and method of manufacturing the same'19995,929,473'MMIC semiconductor device with WN.sub.x capacitor electrode'19995,907,188'Semiconductor device with conductive oxidation preventing film and method for manufacturing the same'19995,903,053'Semiconductor device'19995,770,512'Semiconductor device'19985,731,634'Semiconductor device having a metal film formed in a groove in an insulating film'19985,721,175'Method of manufacturing a semiconductor device'19985,719,410'Semiconductor device wiring or electrode'19985,670,808'Metal oxide capacitor with a WN.sub.X electrode'19975,661,345'Semiconductor device having a single-crystal metal wiring'19975,656,820'Ion generation device, ion irradiation device, and method of manufacturing a semiconductor device'19975,656,859'Semiconductor device'19975,654,237'Method of manufacturing semiconductor device'19975,640,020'Ion generation device, ion irradiation device, and method of manufacturing a semiconductor device'19975,592,024'Semiconductor device having a wiring layer with a barrier layer'19975,561,082'Method for forming an electrode and/or wiring layer by reducing copper oxide or silver oxide'19965,514,425'Method of forming a thin film'19965,470,791'Method of manufacturing semiconductor device'19955,424,246'Method of manufacturing semiconductor metal wiring layer by reduction of metal oxide'19955,409,862'Method for making aluminum single crystal interconnections on insulators'19955,316,977'Method of manufacturing a semiconductor device comprising metal silicide'19945,304,510'Method of manufacturing a multilayered metallization structure in which the conductive layer and insulating layer are selectively deposited'19945,217,923'Method of fabricating a semiconductor device having silicided source/drain regions'19935,192,714'Method of manufacturing a multilayered metallization structure in which the conductive layer and insulating layer are selectively deposited'19935,189,503'High dielectric capacitor having low current leakage'19935,168,332'Semiconductor device having salicide structure, method of manufacturing the same, and heating apparatus'19925,162,263'Semiconductor device having salicide structure, method of manufacturing the same, and heating apparatus'19924,959,745'Capacitor and method for producing the same'19904,912,542'Semiconductor device and method of manufacturing the same'19904,746,803'Method of forming a single crystal semiconductor layer from a non-single-crystalline material and apparatus for forming the same'19884,662,949'Method of forming a single crystal semiconductor layer from a non-single crystalline material by a shaped energy beam'1987

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1987–1988Based in Kawasaki, JP· patent location history
1990–2017Patents assigned to TOSHIBA KK (130)· patent assignee history
1990–2015Based in Yokohama, JP· patent location history
1995–2018Based in Kanagawa, JP· patent location history
2006–2021Based in Tokyo, JP· patent location history
2012–2015Patents assigned to SUGURO KYOICHI (14)· patent assignee history
2012Patents assigned to ITO TAKAYUKI (4)· patent assignee history
2012Based in Yokohoma, JP· patent location history
2014–2015Patents assigned to ITO JUNICHI (3)· patent assignee history
2014–2015Patents assigned to OHSAWA YUICHI (3)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK1301990–2017
SUGURO KYOICHIself142012–2015
ITO TAKAYUKI42012
ITO JUNICHI32014–2015
OHSAWA YUICHI32014–2015
Locations
LocationPatentsSpan
Yokohama, JP1071990–2015
Kanagawa, JP231995–2018
Tokyo, JP22006–2021
Yokohoma, JP22012
Kawasaki, JP21987–1988