Inventor
Lawrence A. Goodman
Inventor
Plainsboro, NJ, US
Overview
Patents· 23 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices36%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein11%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests8%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems3%
C03CChemical composition of glasses, glazes or vitreous enamels3%
C09KMaterials for miscellaneous applications, not provided for elsewhere3%
C23CCoating metallic material3%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems3%
PatentTitleYear
7,982,277'High-efficiency thinned imager with reduced boron updiffusion'20116,410,912'Method for reducing variations in arrays of micro-machined cantilever structures using ion implantation'20026,181,008'Integrated circuit power supply'20016,057,182'Hydrogenation of polysilicon thin film transistors'20006,011,330'Miniature power supply'20005,958,793'Patterning silicon carbide films'19994,937,467'Complementary circuit and structure with common substrate'19904,910,563'Complementary circuit and structure with common substrate'19904,837,606'Vertical MOSFET with reduced bipolar effects'19894,700,460'Method for fabricating bidirectional vertical power MOS device'19874,684,413'Method for increasing the switching speed of a semiconductor device by neutron irradiation'19874,641,164'Bidirectional vertical power MOS device and fabrication method'19874,598,249'Method using surface photovoltage (SPV) measurements for revealing heavy metal contamination of semiconductor material'19864,587,713'Method for making vertical MOSFET with reduced bipolar effects'19864,374,455'Method for manufacturing a vertical, grooved MOSFET'19834,366,495'Vertical MOSFET with reduced turn-on resistance'19824,268,537'Method for manufacturing a self-aligned contact in a grooved semiconductor surface'19814,204,217'Transistor using liquid crystal'19804,126,384'Self-illuminated liquid crystal display device'19784,120,567'Electro-optic device'19784,094,582'Liquid crystal matrix display device with transistors'19784,042,293'Liquid crystal devices having diode characteristics'19773,991,227'Method for forming electrode patterns in transparent conductive coatings on glass substrates'1976Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1976–1987Patents assigned to RCA CORP (14)· patent assignee history
1976–1980Based in East Windsor, NJ, US· patent location history
1981–2011Based in Plainsboro, NJ, US· patent location history
1989–1990Patents assigned to GEN ELECTRIC (3)· patent assignee history
1999–2002Patents assigned to SARNOFF CORP (5)· patent assignee history
2011Patents assigned to STANFORD RES INST INT (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| RCA CORP | 14 | 1976–1987 |
| SARNOFF CORP | 5 | 1999–2002 |
| GEN ELECTRIC | 3 | 1989–1990 |
| STANFORD RES INST INT | 1 | 2011 |
Locations
| Location | Patents | Span |
|---|---|---|
| Plainsboro, New Jersey, US | 17 | 1981–2011 |
| East Windsor, New Jersey, US | 6 | 1976–1980 |