Inventor
YOUNG CHAI JUNG
Inventor
KR
Overview
Patents· 7 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices35%
H10DInorganic electric semiconductor devices35%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
H10BElectronic memory devices5%
PatentTitleYear
11,735,659Integrated circuit devices including a vertical field-effect transistor (VFET) and methods of forming the same202311,699,754Gate structure of vertical FET and method of manufacturing the same202311,552,182Integrated circuit devices including a vertical field-effect transistor (VFET) and methods of forming the same202311,296,210Symmetrical two-dimensional fin structure for vertical field effect transistor and method for manufacturing the same202211,271,091Fin structure for vertical field effect transistor having two-dimensional shape in plan view202211,233,146Gate structure of vertical FET and method of manufacturing the same202211,145,757Integrated circuit devices including a vertical field-effect transistor (VFET) and methods of forming the same2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2023Patents assigned to SAMSUNG ELECTRONICS CO LTD (7)· patent assignee history
2021–2023Based in KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 7 | 2021–2023 |
Locations
| Location | Patents | Span |
|---|---|---|
| KR | 7 | 2021–2023 |