Inventor
Meng-Hsuan Chan
Inventor
Taipei, TW
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices67%
H01LSemiconductor devices17%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
PatentTitleYear
8,962,477'High temperature anneal for stress modulation'20158,716,785'Method and system for metal gate formation with wider metal gate fill margin'20148,530,294'Stress modulation for metal gate semiconductor device'20138,193,081'Method and system for metal gate formation with wider metal gate fill margin'2012Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2012–2015Patents assigned to CHAN MENG-HSUAN (4)· patent assignee history
2012–2015Patents assigned to HSU KUANG-YUAN (4)· patent assignee history
2012–2014Patents assigned to TAIWAN SEMICONDUCTOR MFG (3)· patent assignee history
2012–2015Based in Taipei, TW· patent location history
2013–2015Patents assigned to LEE DA-YUAN (2)· patent assignee history
2013–2015Patents assigned to LEE WEI-YANG (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CHAN MENG-HSUANself | 4 | 2012–2015 |
| HSU KUANG-YUAN | 4 | 2012–2015 |
| TAIWAN SEMICONDUCTOR MFG | 3 | 2012–2014 |
| LEE DA-YUAN | 2 | 2013–2015 |
| LEE WEI-YANG | 2 | 2013–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Taipei, TW | 4 | 2012–2015 |