Inventor
Christopher W. Petz
Inventor
Boise, ID, US
Overview
Patents· 24 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices24%
H10BElectronic memory devices20%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
H10NElectric solid-state devices not otherwise provided for13%
G11CStatic stores10%
H10DInorganic electric semiconductor devices7%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
C23CCoating metallic material4%
PatentTitleYear
11,133,461Laminate diffusion barriers and related devices and methods202111,127,745Devices, methods of forming a device, and memory devices202111,101,274Ferroelectric capacitor, a ferroelectric memory cell, an array of ferroelectric memory cells, and a method of forming a ferroelectric capacitor202111,018,298Phase change memory structures202110,991,882Methods of forming resistive memory elements202110,957,644Integrated structures with conductive regions having at least one element from group 2 of the periodic table202110,916,564Assemblies having vertically-extending structures, and methods of forming assemblies having vertically-extending channel material pillars202110,811,419Storage node shaping202010,707,212Methods of forming an apparatus, and related apparatuses and electronic systems202010,700,091Assemblies having vertically-extending structures, and methods of forming assemblies having vertically-extending channel material pillars202010,692,572Variable resistance memory stack with treated sidewalls202010,546,848Integrated assemblies and methods of forming integrated assemblies202010,446,751Methods of forming resistive memory elements201910,381,072Phase change memory stack with treated sidewalls201910,354,989Integrated assemblies and methods of forming integrated assemblies201910,355,014Assemblies having vertically-extending structures201910,325,653Variable resistance memory stack with treated sidewalls201910,304,749Method and apparatus for improved etch stop layer or hard mask layer of a memory device20199,893,282'Methods of forming resistive memory elements'20189,553,263'Resistive memory elements including buffer materials, and related memory cells, memory devices, electronic systems'20179,444,042'Memory cells and methods of forming memory cells'20169,431,606'Memory cells'20169,419,212'Barrier film techniques and configurations for phase-change memory elements'20169,209,388'Memory cells and methods of forming memory cells'2015Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2015–2021Patents assigned to MICRON TECHNOLOGY INC (20)· patent assignee history
2015–2021Based in Boise, ID, US· patent location history
2016–2021Patents assigned to INTEL CORP (4)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MICRON TECHNOLOGY INC | 20 | 2015–2021 |
| INTEL CORP | 4 | 2016–2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Boise, ID, US | 24 | 2015–2021 |