Inventor

YU-LIEN HUANG

Inventor

TW

Overview

2021–2026

Patent span

Electricity

Primary field (CPC H)

Patents· 74 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices31%

H01LSemiconductor devices28%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1023%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%

H10BElectronic memory devices4%

B82YSpecific uses or applications of nanostructures2%

PatentTitleYear

12,598,767Dielectric layers for semiconductor devices and methods of forming the same2026 12,557,620Transistor contacts and methods of forming the same2026 12,520,576Device having a contiguous multi-section fin-cut isolation2026 12,501,679Interconnect structures for semiconductor devices and methods of manufacturing the same2025 12,484,293Semiconductor devices and methods of manufacture2025 12,477,821Semiconductor device having air spacers2025 12,471,357Semiconductor device and method2025 12,396,239Semiconductor device structure and methods of forming the same2025 12,382,654Semiconductor devices2025 12,369,293Conductive feature formation2025 12,362,239Self aligned contact scheme2025 12,336,236Semiconductor device isolation features2025 12,310,043Method of fabricating a semiconductor device2025 12,310,051Fin field-effect transistor device having contact plugs with re-entrant profile2025 12,302,626Asymmetric source/drain epitaxy2025 12,293,947Gap patterning for metal-to-source/drain plugs in a semiconductor device2025 12,283,625Manufacturing method of semiconductor device2025 12,283,527Methods of forming semiconductor device structures2025 12,272,731Middle-of-line interconnect structure and manufacturing method2025 12,268,027Middle-of-line interconnect structure and manufacturing method2025 12,237,419Gate structures in transistor devices and methods of forming same2025 12,218,242Semiconductor structure2025 12,211,937Field effect transistor device with air gap spacer in source/drain contact2025 12,211,924Semiconductor device and method of forming the same2025 12,191,206Method of manufacturing fin spacers having different heights using a polymer-generating etching process2025 12,165,915Semiconductor device contact and method of making same2024 12,148,831Semiconductor device and a method for fabricating the same2024 12,148,622Semiconductor devices2024 12,142,532Interconnect structures for semiconductor devices and methods of manufacturing the same2024 12,131,945Semiconductor device and manufacturing method thereof2024 12,132,089Methods for forming recesses in source/drain regions and devices formed thereof2024 12,119,231Semiconductor device and method2024 12,096,609Conductive feature formation2024 12,094,768Method for sealing a seam, semiconductor structure, and method for manufacturing the same2024 12,087,776Semiconductor device and manufacturing method thereof2024 12,062,658Method for forming an integrated circuit having transistor gates over an interconnection structure2024 12,057,503Asymmetric source and drain structures in semiconductor devices2024 12,046,676Semiconductor devices and methods of manufacturing thereof2024 12,009,429Semiconductor device and method2024 11,978,670Self aligned contact scheme2024 11,942,479Semiconductor device and manufacturing method thereof2024 11,935,920Semiconductor device and method2024 11,916,147Fin field-effect transistor device having contact plugs with re-entrant profile2024 11,901,452Source/drain structure having multi-facet surface2024 11,888,064Semiconductor device and method2024 11,854,814Semiconductor device and method2023 11,855,186Semiconductor device and manufacturing method thereof2023 11,854,897Asymmetric source/drain epitaxy2023 11,842,930Gap patterning for metal-to-source/drain plugs in a semiconductor device2023 11,769,770Methods of forming a semiconductor device having an air spacer2023 11,764,220Method of manufacturing a semiconductor device by patterning a serpentine cut pattern2023 11,764,215Semiconductor devices and methods of manufacture2023 11,735,667Semiconductor device and method2023 11,728,218Semiconductor device and method2023 11,721,764Semiconductor structure and method for forming the same2023 11,715,777Semiconductor device and method2023 11,695,061FinFETs with low source/drain contact resistance2023 11,688,787Semiconductor device having modified profile metal gate2023 11,670,717Structure of S/D contact and method of making same2023 11,626,326Interconnect structures for semiconductor devices and methods of manufacturing the same2023 11,545,546Semiconductor device and method2023 11,532,712Interconnect structures for semiconductor devices and methods of manufacturing the same2022 11,532,500FinFET structure with different fin heights and method for forming the same2022 11,515,165Semiconductor device and method2022 11,417,740Methods for forming recesses in source/drain regions and devices formed thereof2022 11,398,385Semiconductor device and method2022 11,380,794Fin field-effect transistor device having contact plugs with re-entrant profile2022 11,355,637Semiconductor device and method2022 11,355,638Semiconductor device and a method for fabricating the same2022 11,355,399Gap patterning for metal-to-source/drain plugs in a semiconductor device2022 11,348,927Conductive feature formation2022 11,302,577Self aligned contact scheme2022 11,271,095FinFETs with low source/drain contact resistance2022 11,145,749Method of fabricating a semiconductor device2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (74)· patent assignee history

2021–2026Based in TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG CO LTD	74	2021–2026

Locations

Location	Patents	Span
TW	74	2021–2026