Inventor
SUNG-EN LIN
Inventor
TW
Overview
Patents· 22 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices30%
H01LSemiconductor devices26%
B82YSpecific uses or applications of nanostructures17%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices1%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation1%
PatentTitleYear
12,550,473Back-trench isolation structure202612,527,047Isolation structure for transistors202612,501,690Hardmask formation with hybrid materials in semiconductor device202512,376,339Semiconductor device structure and method for forming the same202512,349,381Dielectric isolation structure for multi-gate transistors202512,266,529Patterning semiconductor devices and structures resulting therefrom202512,266,541Semiconductor device and method202512,166,076Semiconductor device and methods of forming the same202412,113,113Semiconductor device with a core-shell feature and method for forming the same202412,094,784Method for manufacturing semiconductor device202412,080,553Semiconductor device and method of manufacture202412,002,719Gapfill structure and manufacturing methods thereof202411,955,370Semiconductor devices and methods of manufacture202411,948,843Method for forming hardmask formation by hybrid materials in semiconductor device202411,888,049Dielectric isolation structure for multi-gate transistors202411,854,819Germanium hump reduction202311,848,209Patterning semiconductor devices and structures resulting therefrom202311,810,824Semiconductor device and manufacturing method thereof202311,557,518Gapfill structure and manufacturing methods thereof202311,532,733Dielectric isolation structure for multi-gate transistors202211,437,245Germanium hump reduction202211,195,717Semiconductor device and method2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (22)· patent assignee history
2021–2026Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 22 | 2021–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 22 | 2021–2026 |