LexDanaLexDanabeta
Inventor

Chi-I Lang

Inventor
Cupertino, CA, US

Overview

89→
Patents
2000–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 89 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
C23CCoating metallic material15%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%
H01LSemiconductor devices7%
H10NElectric solid-state devices not otherwise provided for7%
H10BElectronic memory devices6%
H01JElectric discharge tubes or discharge lamps4%
Y10TTechnical subjects covered by former us classification3%
G01NInvestigating or analysing materials by determining their chemical or physical properties3%
H10DInorganic electric semiconductor devices3%
PatentTitleYear
10,954,129Diamond-like carbon as mandrel202110,867,795Method of etching hardmasks containing high hardness materials20209,245,848'Methods for coating a substrate with an amphiphilic compound'20169,245,744'Combinatorial plasma enhanced deposition and etch techniques'20169,245,793'Plasma treatment of low-K surface to improve barrier deposition'20169,224,644'Method to control depth profiles of dopants using a remote plasma source'20159,176,181'High throughput current-voltage combinatorial characterization tool and method for combinatorial solar test substrates'20159,175,382'High metal ionization sputter gun'20159,178,145'Methods for forming resistive switching memory elements'20159,147,841'Resistive-switching memory element'20159,103,871'High throughput quantum efficiency combinatorial characterization tool and method for combinatorial solar test substrates'20159,105,563'Method and system of improved uniformity testing'20159,023,438'Methods and apparatus for combinatorial PECVD or PEALD'20158,987,143'Hydrogen plasma cleaning of germanium oxide surfaces'20158,980,709'Resistive-switching memory element'20158,920,618'Combinatorial processing using high deposition rate sputtering'20148,906,207'Control of film composition in co-sputter deposition by using collimators'20148,901,677'Nucleation interface for high-k layer on germanium'20148,893,923'Methods and systems for dispensing different liquids for high productivity combinatorial processing'20148,889,479'Nonvolatile memory elements with metal-deficient resistive-switching metal oxides'20148,871,860'Methods for coating a substrate with an amphiphilic compound'20148,865,518'Methods for forming resistive switching memory elements'20148,859,427'Formation of a zinc passivation layer on titanium or titanium alloys used in semiconductor processing'20148,836,365'Apparatus and method for testing electromigration in semiconductor devices'20148,821,987'Combinatorial processing using a remote plasma source'20148,821,985'Method and apparatus for high-K gate performance improvement and combinatorial processing'20148,822,313'Surface treatment methods and systems for substrate processing'20148,809,161'Flowable film dielectric gap fill process'20148,728,879'Formation of a zinc passivation layer on titanium or titanium alloys used in semiconductor processing'20148,726,838'Combinatorial plasma enhanced deposition and etch techniques'20148,683,420'Method and system of improved reliability testing'20148,679,988'Plasma processing of metal oxide films for resistive memory device applications'20148,657,966'Combinatorial approach to the development of cleaning formulations for glue removal in semiconductor applications'20148,614,787'High throughput quantum efficiency combinatorial characterization tool and method for combinatorial solar test substrates'20138,609,475'Methods for forming nickel oxide films for use with resistive switching memory devices/US'20138,580,344'Stamp usage to enhance surface layer functionalization and selectivity'20138,580,584'System and method for increasing productivity of organic light emitting diode material screening'20138,580,697'CVD flowable gap fill'20138,575,021'Substrate processing including a masking layer'20138,552,755'High throughput current-voltage combinatorial characterization tool and method for combinatorial solar test substrates'20138,551,560'Methods for improving selectivity of electroless deposition processes'20138,535,972'Methods for coating a substrate with an amphiphilic compound'20138,481,403'Flowable film dielectric gap fill process'20138,476,107'Methods for forming resistive switching memory elements'20138,440,259'Vapor based combinatorial processing'20138,432,177'High throughput current-voltage combinatorial characterization tool and method for combinatorial solar test substrates'20138,426,970'Substrate processing including a masking layer'20138,370,096'Method and system of improved uniformity testing'20138,344,375'Nonvolatile memory elements with metal deficient resistive switching metal oxides'20138,334,015'Vapor based combinatorial processing'20128,298,837'System and method for increasing productivity of organic light emitting diode material screening'20128,298,891'Resistive-switching memory element'20128,283,214'Methods for forming nickel oxide films for use with resistive switching memory devices'20128,252,685'Techniques to improve characteristics of processed semiconductor substrates'20128,143,164'Formation of a zinc passivation layer on titanium or titanium alloys used in semiconductor processing'20128,097,878'Nonvolatile memory elements with metal-deficient resistive-switching metal oxides'20127,972,897'Methods for forming resistive switching memory elements'20117,919,446'Post-CMP cleaning compositions and methods of using same'20117,915,139'CVD flowable gap fill'20117,902,064'Method of forming a layer to enhance ALD nucleation on a substrate'20117,888,233'Flowable film dielectric gap fill process'20117,884,036'Methods for treating substrates in preparation for subsequent processes'20117,879,710'Substrate processing including a masking layer'20117,745,328'Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)'20107,727,906'H2-based plasma treatment to eliminate within-batch and batch-to-batch etch drift'20107,704,789'Methods for forming resistive switching memory elements'20107,678,607'Methods for forming resistive switching memory elements'20107,658,790'Concentrated electroless solution for selective deposition of cobalt-based capping/barrier layers'20107,629,198'Methods for forming nonvolatile memory elements with resistive-switching metal oxides'20097,582,555'CVD flowable gap fill'20097,524,735'Flowable film dielectric gap fill process'20097,514,375'Pulsed bias having high pulse frequency for filling gaps with dielectric material'20097,482,245'Stress profile modulation in STI gap fill'20097,476,621'Halogen-free noble gas assisted H2 plasma etch process in deposition-etch-deposition gap fill'20097,465,659'Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)'20087,435,684'Resolving of fluorine loading effect in the vacuum chamber'20087,381,451'Strain engineering—HDP thin film with tensile stress for FEOL and other applications'20087,344,996'Helium-based etch process in deposition-etch-deposition gap fill'20087,211,525'Hydrogen treatment enhanced gap fill'20077,157,384'Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)'20077,153,787'CVD plasma assisted lower dielectric constant SICOH film'20066,943,127'CVD plasma assisted lower dielectric constant SICOH film'20056,849,562'Method of depositing a low k dielectric barrier film for copper damascene application'20056,838,393'Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbide'20056,709,715'Plasma enhanced chemical vapor deposition of copolymer of parylene N and comonomers with various double bonds'20046,486,082'CVD plasma assisted lower dielectric constant sicoh film'20026,413,583'Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound'20026,107,184'Nano-porous copolymer films having low dielectric constants'20006,086,952'Chemical vapor deposition of a copolymer of p-xylylene and a multivinyl silicon/oxygen comonomer'2000

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2000–2021Patents assigned to APPLIED MATERIALS INC (14)· patent assignee history
2000–2014Based in Sunnyvale, CA, US· patent location history
2007–2014Patents assigned to NOVELLUS SYSTEMS INC (15)· patent assignee history
2007Based in Sunnyvle, CA, US· patent location history
2009–2016Patents assigned to INTERMOLECULAR INC (60)· patent assignee history
2011–2021Based in Cupertino, CA, US· patent location history
2011–2013Based in San Jose, CA, US· patent location history
2011Based in Sunnyville, CA, US· patent location history
2012–2015Patents assigned to LANG CHI-I (31)· patent assignee history
2012–2015Patents assigned to CHIANG TONY P (12)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
INTERMOLECULAR INC602009–2016
LANG CHI-Iself312012–2015
NOVELLUS SYSTEMS INC152007–2014
APPLIED MATERIALS INC142000–2021
CHIANG TONY P122012–2015
Locations
LocationPatentsSpan
Cupertino, California, US452011–2021
Sunnyvale, California, US392000–2014
San Jose, California, US32011–2013
Sunnyville, California, US12011
Sunnyvle, California, US12007