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Inventor

Jian Li

Inventor
Sunnyvale, CA, US

Overview

19→
Patents
2002–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 19 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices36%
H05BElectric heating21%
H01LSemiconductor devices14%
LOC267%
G06FElectric digital data processing4%
G06NComputing arrangements based on specific computational models4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
Y02BClimate change mitigation technologies related to buildings, e.g. housing, house appliances or related end-user applications4%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
PatentTitleYear
D0922664Stage lamp with starry sky effect202111,030,064Facilitating classification of equipment failure data2021D0920564Light20219,947,770Self-aligned trench MOSFET and method of manufacture20189,761,696'Self-aligned trench MOSFET and method of manufacture'20179,437,729'High-density power MOSFET with planarized metalization'20168,916,929'MOSFET having a JFET embedded as a body diode'20148,269,263'High current density power field effect transistor'20128,097,512'MOSFET having a JFET embedded as a body diode'20128,067,904'Electronic ballast with dimming control from power line sensing'20117,999,495'Electronic ballast with dimming control from power line sensing'20117,999,494'Electronic ballast with dimming control from power line sensing'20117,982,413'Electronic ballast with dimming control from power line sensing'20117,696,598'Ultrafast recovery diode'20107,608,888'Field effect transistor'20097,459,866'DC to DC conversion circuit with variable output voltage'20087,417,266'MOSFET having a JFET embedded as a body diode'20087,211,845'Multiple doped channel in a multiple doped gate junction field effect transistor'20076,369,517'Infrared inductive light switch using triac trigger-control and early-charging-peak current limiter with adjustable power consumption'2002

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2007–2010Patents assigned to QSPEED SEMICONDUCTOR INC (4)· patent assignee history
2007–2014Based in Sunnyvale, CA, US· patent location history
2008–2011Based in Hsinchu, TW· patent location history
2011Patents assigned to GRENERGY OPTO INC (4)· patent assignee history
2012–2018Patents assigned to LI JIAN (5)· patent assignee history
2012–2018Patents assigned to VISHAY SILICONIX (4)· patent assignee history
2012–2014Patents assigned to CHANG DANIEL (2)· patent assignee history
2012–2018Based in Palo Alto, CA, US· patent location history
2021Based in Guangxi, CN· patent location history
2021Based in Beijing, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
LI JIANself52012–2018
GRENERGY OPTO INC42011
QSPEED SEMICONDUCTOR INC42007–2010
VISHAY SILICONIX42012–2018
CHANG DANIEL22012–2014
Locations
LocationPatentsSpan
Sunnyvale, California, US62007–2014
Hsinchu, TW52008–2011
Palo Alto, California, US42012–2018
Guangxi, CN12021
Beijing, CN12021