Inventor
TSUNG-DA LIN
Inventor
TW
Overview
Patents· 11 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices35%
B82YSpecific uses or applications of nanostructures23%
H01LSemiconductor devices23%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
PatentTitleYear
12,598,784Semiconductor device having doped gate dielectric layer and method for forming the same202612,568,662Semiconductor devices and methods of forming the same202612,538,571Transistor gate structures and methods of forming the same202612,501,689Nanostructure field-effect transistor device and method of forming202512,362,185Method forming gate stacks adopting thin silicon cap202512,336,273Method for forming semiconductor structure using fluorine to treat gate stack202512,074,206Integrated circuit device with improved reliability202412,051,594Method for forming semiconductor device structure with gate202412,040,365Incorporating nitrogen in dipole engineering for multi-threshold voltage applications in stacked device structures202412,015,066Triple layer high-k gate dielectric stack for workfunction engineering202411,791,216Nanostructure field-effect transistor device and method of forming2023Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2023–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (11)· patent assignee history
2023–2026Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 11 | 2023–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 11 | 2023–2026 |