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Inventor

Qi Xang

Inventor
San Jose, CA, US

Overview

2→
Patents
2001–2003
Patent span
Electricity
Primary field (CPC H)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices67%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1033%
PatentTitleYear
6,559,051'Electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistors'20036,300,203'Electrolytic deposition of dielectric precursor materials for use in in-laid gate MOS transistors'2001

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2001–2003Patents assigned to ADVANCED MICRO DEVICES INC (2)· patent assignee history
2001–2003Based in San Jose, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
ADVANCED MICRO DEVICES INC22001–2003
Locations
LocationPatentsSpan
San Jose, California, US22001–2003