Inventor
Masato Ishino
Inventor
Osaka, JP
Overview
Patents· 22 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light38%
B82YSpecific uses or applications of nanostructures29%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests13%
H10DInorganic electric semiconductor devices5%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
G02BOptical elements, systems or apparatus4%
H10HInorganic light-emitting semiconductor devices having potential barriers4%
C30BSingle-crystal growth2%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein2%
PatentTitleYear
9,529,187'Reflective display device'20166,933,159'Fabrication method of a semiconductor laser device'20056,697,392'Single wavelength laser module'20046,650,672'Semiconductor laser element having excellent light confinement effect and method for producing the semiconductor laser element'20036,636,541'Semiconductor laser device'20036,625,189'Semiconductor laser device and fabrication method thereof'20036,256,331'Semiconductor laser device, optical communication system using the same, and method for producing compound semiconductor'20016,151,351'Distributed feedback semiconductor laser and method for producing the same'20006,110,756'Method for producing semiconductor laser'20006,107,112'Distributed feedback semiconductor laser and method for producing the same'20006,104,738'Semiconductor laser and process for producing the same'20005,960,257'Method distributed feedback semiconductor laser for fabricating'19995,856,207'Method for producing a semiconductor laser'19995,793,788'Semiconductor light emitting element with p-type non-alloy electrode including a platinum layer and method for fabricating the same'19985,764,682'Distributed feedback semiconductor laser and method for fabricating the same'19985,652,762'Semiconductor laser device and method for fabricating the same and strained quantum well crystal and method for fabricating the same'19975,621,747'Multi quantum well semiconductor laser and optical communication system using the same'19975,568,501'Semiconductor laser and method for producing the same'19965,539,766'Distributed feedback semiconductor laser'19965,319,657'Semiconductor laser of modulation doping quantum well structure with stopper against dopant dispersion and manufacturing method thereof'19945,227,015'Method of fabricating semiconductor laser'19934,961,198'Semiconductor device'1990Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1990–2005Patents assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (21)· patent assignee history
1990–2016Based in Osaka, JP· patent location history
1994–2004Based in Shijonawate, JP· patent location history
1996–2000Based in Shijyonawate, JP· patent location history
2003Based in Shijounawate, JP· patent location history
2016Patents assigned to PANASONIC CORP (1)· patent assignee history
2016Patents assigned to PANASONIC IP MAN CO LTD (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MATSUSHITA ELECTRIC INDUSTRIAL CO LTD | 21 | 1990–2005 |
| PANASONIC CORP | 1 | 2016 |
| PANASONIC IP MAN CO LTD | 1 | 2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Osaka, JP | 8 | 1990–2016 |
| Shijyonawate, JP | 8 | 1996–2000 |
| Shijonawate, JP | 5 | 1994–2004 |
| Shijounawate, JP | 1 | 2003 |