Inventor
Chun-Wei Hsu
Inventor
Taichung, TW
Overview
Patents· 74 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices30%
H01LSemiconductor devices26%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
C09GPolishing compositions2%
C09KMaterials for miscellaneous applications, not provided for elsewhere1%
H03HImpedance networks, e.g. resonant circuits1%
H04WWireless communication networks1%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation1%
G02BOptical elements, systems or apparatus1%
PatentTitleYear
11,133,247Vias with metal caps for underlying conductive lines202111,121,028Semiconductor devices formed using multiple planarization processes202111,114,339Method for reducing metal plug corrosion and device202111,094,555CMP slurry and CMP method202111,075,107Semiconductor structure and manufacturing method thereof202110,950,217Acoustic quadrupole system for head mounted wearable device202110,868,135High electron mobility transistor structure202010,790,375High electron mobility transistor202010,741,665Method of forming a high electron mobility transistor202010,692,732CMP slurry and CMP method202010,636,701Methods of forming semiconductor devices using multiple planarization processes202010,522,630High electron mobility transistor structure and method of making the same201910,510,601Method for reducing metal plug corrosion and device201910,283,599High electron mobility transistor structure and method of making the same201910,276,682High electron mobility transistor201910,164,047High electron mobility transistor structure201810,157,781Method for forming semiconductor structure using polishing process201810,115,813Semiconductor structure and method of forming the same201810,096,690Circuit structure, transistor and semiconductor device201810,050,117Method of forming a high electron mobility transistor201810,020,361Circuit structure having islands between source and drain and circuit formed20189,985,103Method of forming high electron mobility transistor20189,967,726Method and device for deterministic directional discovery of wireless devices20189,871,030'Plasma protection diode for a HEMT device'20189,793,371'Method of forming a high electron mobility transistor'20179,768,064'Formation method of semiconductor device structure'20179,748,372'Semiconductor structure and method of forming the same'20179,728,613'High electron mobility transistor structure'20179,704,968'Method of forming a high electron mobility transistor'20179,634,637'Method for performing dynamic impedance matching and a communication apparatus thereof'20179,583,588'Method of making high electron mobility transistor structure'20179,570,598'Method of forming a semiconductor structure'20179,553,182'Circuit structure, transistor and semiconductor device'20179,508,807'Method of forming high electron mobility transistor'20169,502,311'Plasma protection diode for a HEMT device'20169,425,300'Semiconductor structure and method of forming the same'20169,419,093'Method of forming a high electron mobility transistor'20169,385,225'Method of making a circuit structure having islands between source and drain'20169,379,191'High electron mobility transistor including an isolation region'20169,263,565'Method of forming a semiconductor structure'20169,224,829'High electron mobility transistor and method of forming the same'20159,184,259'Semiconductor structure and method of forming the same'20159,165,839'Plasma protection diode for a HEMT device'20159,147,743'High electron mobility transistor structure with improved breakdown voltage performance'20159,111,904'Substrate breakdown voltage improvement for group III-nitride on a silicon substrate'20159,111,905'High electron mobility transistor and method of forming the same'20159,107,144'Method for searching wireless signal, mobile electronic device using the same, and non-transitory storage medium'20159,048,815'Method for performing dynamic impedance matching and a communication apparatus thereof'20159,048,536'Mobile communication device and impedance matching method thereof'20159,018,677'Semiconductor structure and method of forming the same'20159,012,300'Manufacturing method for a shallow trench isolation'20158,963,162'High electron mobility transistor'20158,946,771'Gallium nitride semiconductor devices and method making thereof'20158,946,012'Method of forming a semiconductor structure'20158,940,600'Method for fabricating semiconductor device'20158,921,893'Circuit structure having islands between source and drain'20148,884,308'High electron mobility transistor structure with improved breakdown voltage performance'20148,860,088'Semiconductor structure and method of forming the same'20148,841,703'High electron mobility transistor and method of forming the same'20148,779,526'Semiconductor device'20148,748,942'High electron mobility transistor and method of forming the same'20148,697,505'Method of forming a semiconductor structure'20148,680,535'High electron mobility transistor structure with improved breakdown voltage performance'20148,674,452'Semiconductor device with lower metal layer thickness in PMOS region'20148,647,986'Semiconductor process'20148,643,069'Semiconductor device having metal gate and manufacturing method thereof'20148,624,322'High voltage device with a parallel resistor'20148,580,625'Metal oxide semiconductor transistor and method of manufacturing the same'20138,536,038'Manufacturing method for metal gate using ion implantation'20138,513,128'Poly opening polish process'20138,507,920'Semiconductor structure and method of forming the same'20138,347,369'System and method for communication security'20138,260,694'System, method, and computer program for managing transaction billing across a plurality of billing sources utilizing an interface to configure advice-of-charge'20126,057,751'Overheat and overload sensing device'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2013–2016Patents assigned to HSU CHUN-WEI (24)· patent assignee history
2013–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (22)· patent assignee history
2013–2016Patents assigned to YANG FU-CHIH (13)· patent assignee history
2013–2016Patents assigned to YU JIUN-LEI JERRY (13)· patent assignee history
2013–2021Based in Taichung, TW· patent location history
2013–2018Based in Taipei, TW· patent location history
2015–2017Based in Taoyuan, TW· patent location history
2015Based in Taoyuan County, TW· patent location history
2016–2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (34)· patent assignee history
2017–2021Based in Hsinchu, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 34 | 2016–2021 |
| HSU CHUN-WEIself | 24 | 2013–2016 |
| TAIWAN SEMICONDUCTOR MFG | 22 | 2013–2016 |
| YANG FU-CHIH | 13 | 2013–2016 |
| YU JIUN-LEI JERRY | 13 | 2013–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Taichung, TW | 46 | 2013–2021 |
| Hsinchu, TW | 10 | 2017–2021 |
| Taipei, TW | 10 | 2013–2018 |
| Taoyuan, TW | 2 | 2015–2017 |
| Taoyuan County, TW | 2 | 2015 |