Inventor
Pablo ACOSTA ALBA
Inventor
FR
Overview
Patents· 10 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices26%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
H10DInorganic electric semiconductor devices13%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation8%
G01NInvestigating or analysing materials by determining their chemical or physical properties3%
H01QAntennas, i.e. radio aerials3%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light3%
H03HImpedance networks, e.g. resonant circuits3%
H10HInorganic light-emitting semiconductor devices having potential barriers3%
PatentTitleYear
12,154,786Method for modifying a strain state of at least one semiconductor layer202412,040,595Optoelectronic device comprising a semiconductor layer based on GeSn having a single-crystal portion with a direct band structure and an underlying barrier region202411,973,118Method for forming ohmic contacts, particularly of Ni(GeSn) type implementing laser annealing202411,901,194Method of forming a porous portion in a substrate202411,848,191RF substrate structure and method of production202311,769,687Method for layer transfer with localised reduction of a capacity to initiate a fracture202311,610,806Multilayer stack of semiconductor-on-insulator type, associated production process, and radio frequency module comprising it202311,508,613Method of healing an implanted layer comprising a heat treatment prior to recrystallisation by laser annealing202211,469,137Manufacturing process of an RF-SOI trapping layer substrate resulting from a crystalline transformation of a buried layer202211,195,711Healing method before transfer of a semiconducting layer2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2024Patents assigned to COMMISSARIAT ENERGIE ATOMIQUE (10)· patent assignee history
2021–2024Based in FR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| COMMISSARIAT ENERGIE ATOMIQUE | 10 | 2021–2024 |
Locations
| Location | Patents | Span |
|---|---|---|
| FR | 10 | 2021–2024 |