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Inventor

Kenji Hiratsuka

Inventor
Yokohama, JP

Overview

19→
Patents
1980–2017
Patent span
Electricity
Primary field (CPC H)

Patents· 19 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light33%
B82YSpecific uses or applications of nanostructures18%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
H10DInorganic electric semiconductor devices10%
H01LSemiconductor devices5%
H10HInorganic light-emitting semiconductor devices having potential barriers5%
C04BLime, magnesia3%
C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients3%
G02BOptical elements, systems or apparatus3%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein3%
PatentTitleYear
9,793,365'Method for manufacturing silicon carbide semiconductor device having trench'20179,627,487'Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device'20178,964,809'Semiconductor optical integrated device'20158,889,445'Method for manufacturing semiconductor optical device and semiconductor optical device'20148,772,113'Method for manufacturing silicon carbide semiconductor device'20148,637,338'Method for producing integrated optical device'20148,637,329'Method for producing semiconductor optical integrated device'20148,597,966'Method for producing semiconductor optical device'20138,563,342'Method of making semiconductor optical integrated device by alternately arranging spacers with integrated device arrays'20138,409,889'Method for producing semiconductor optical device'20138,216,868'Method of fabricating semiconductor laser'20128,039,282'Semiconductor optical device and method of fabricating the same'20117,947,520'Semiconductor laser and method of making the same'20117,897,422'Semiconductor light-emitting device and a method to produce the same'20117,807,489'Light-emitting device with a protection layer to prevent the inter-diffusion of zinc (Zn) atoms'20107,772,023'Method of producing semiconductor optical device'20107,456,040'Method for producing semiconductor optical device'20086,818,521'Method of manufacturing a hetero-junction bipolar transistor with epitaxially grown multi-layer films and annealing at or below 600 C.'20044,186,234'Light transmissible high density elastic resin composition'1980

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1980Based in Kasugai, JP· patent location history
2004–2017Patents assigned to SUMITOMO ELECTRIC INDUSTRIES (18)· patent assignee history
2004–2015Based in Yokohama, JP· patent location history
2012–2015Patents assigned to HIRATSUKA KENJI (6)· patent assignee history
2013–2015Patents assigned to KOBAYASHI HIROHIKO (3)· patent assignee history
2013–2015Patents assigned to KOYAMA KENJI (3)· patent assignee history
2013–2015Patents assigned to YANAGISAWA MASAKI (3)· patent assignee history
2013–2014Based in Kamakura, JP· patent location history
2014–2017Based in Osaka, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SUMITOMO ELECTRIC INDUSTRIES182004–2017
HIRATSUKA KENJIself62012–2015
KOBAYASHI HIROHIKO32013–2015
KOYAMA KENJI32013–2015
YANAGISAWA MASAKI32013–2015
Locations
LocationPatentsSpan
Yokohama, JP132004–2015
Osaka, JP32014–2017
Kamakura, JP22013–2014
Kasugai, JP11980