Inventor
WIN-SAN KHWA
Inventor
TW
Overview
Patents· 50 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores55%
G06FElectric digital data processing15%
G06NComputing arrangements based on specific computational models8%
H03KPulse technique8%
H03MCoding6%
H03LAutomatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses2%
H10BElectronic memory devices2%
H10NElectric solid-state devices not otherwise provided for2%
PatentTitleYear
12,573,438Device having rows of MRAM cells configured for concurrent writing and reading202612,562,203Sensing amplifier of memory array, memory device and data read method with two state reference voltages202612,554,433Memory device202612,475,935Memory system and operating method of the same202512,469,537Systems and methods for reading bit state in arrays of memory cells202512,437,808Memory device and operating method thereof202512,424,298Control circuit, memory system and control method202512,362,027Shift register having low power mode202512,362,028Memory test circuit, memory chip, and testing method of memory chip202512,354,701Sense amplifier circuit and method202512,347,474Memory devices, circuits and methods of adjusting a sensing current for the memory device202512,334,151Non-volatile memory stored with encoded data202512,317,515Memory device and semiconductor die having the memory device202512,283,340Method for controlling sense amplifier and control device using the same202512,237,009Sense amplifier circuit, memory circuit, and sensing method thereof202512,229,003Memory error detection and correction202512,205,017Method and apparatus for defect-tolerant memory-based artificial neural network202512,205,670Memory system and operating method of memory system202512,170,123Memory test circuit, memory array, and testing method of memory array202412,165,733Sense amplifier, memory device and operation method thereof202412,080,346Memory device, integrated circuit device and method202412,057,164Method of data encoding in non-volatile memories202412,057,182Multi-level cell data encoding202412,051,457High-density memory cells and layouts thereof202412,040,011Memory device with low power consumption and operation method thereof202412,033,697Memory device and operating method thereof202412,009,051Method of storing data in memories202411,990,194Shift register having low power mode202411,962,332Encoder202411,942,178Sense amplifier circuit and method202411,942,146Methods of controlling PCRAM devices in single-level-cell (SLC) and multi-level-cell (MLC) modes and a controller for performing the same methods202411,942,185Memory device and method202411,915,733Memory devices, circuits and methods of adjusting a sensing current for the memory device202411,901,004Memory array, memory structure and operation method of memory array202411,862,243Memory device and method thereof202411,797,831Method and apparatus for defect-tolerant memory based artificial neural network202311,762,732Memory error detection and correction202311,756,645Control circuit, memory system and control method202311,705,212Memory device and error correction method in memory device202311,664,790Selector-based random number generator and method thereof202311,581,039Methods of controlling PCRAM devices in single-level-cell (SLC) and multi-level-cell (MLC) modes and a controller for performing the same methods202311,575,387Symmetry unary code encoder202311,573,768Memory device and method for generating random bit stream with configurable ratio of bit values202311,532,357Memory cell with temperature modulated read voltage202211,461,623Method and apparatus for defect-tolerant memory-based artificial neural network202211,456,040Memory device and error correction method in memory device202211,443,803Memory device and method thereof202211,349,462Selector-based random number generator and method thereof202211,204,826Memory error detection and correction202111,152,066Non-volatile memory device and method for programming non-volatile memory device2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (50)· patent assignee history
2021–2026Based in TW· patent location history
2024–2025Patents assigned to UNIV NAT TSING HUA (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 50 | 2021–2026 |
| UNIV NAT TSING HUA | 3 | 2024–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 50 | 2021–2026 |