LexDanaLexDanabeta
Inventor

Marek Pabisz

Inventor
Quakertown, PA, US

Overview

5→
Patents
2008–2014
Patent span
Electricity
Primary field (CPC H)

Patents· 5 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices83%
H01LSemiconductor devices17%
PatentTitleYear
8,823,013'Second Schottky contact metal layer to improve GaN schottky diode performance'20148,629,525'Second contact schottky metal layer to improve GaN schottky diode performance'20148,026,568'Second Schottky contact metal layer to improve GaN Schottky diode performance'20117,863,172'Gallium nitride semiconductor device'20117,436,039'Gallium nitride semiconductor device'2008

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2008–2011Patents assigned to VELOX SEMICONDUCTOR CORP (2)· patent assignee history
2008–2014Based in Quakertown, PA, US· patent location history
2011–2014Patents assigned to POWER INTEGRATIONS INC (3)· patent assignee history
2014Patents assigned to PABISZ MAREK (1)· patent assignee history
2014Patents assigned to ZHU TING GANG (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
POWER INTEGRATIONS INC32011–2014
VELOX SEMICONDUCTOR CORP22008–2011
PABISZ MAREKself12014
ZHU TING GANG12014
Locations
LocationPatentsSpan
Quakertown, Pennsylvania, US52008–2014