Inventor
Kai Wu
Inventor
Palo Alto, CA, US
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1024%
C23CCoating metallic material23%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
H01LSemiconductor devices15%
H01JElectric discharge tubes or discharge lamps5%
H10BElectronic memory devices5%
H10DInorganic electric semiconductor devices3%
B08BCleaning in general2%
C23FNon-mechanical removal of metallic material from surface2%
C23GCleaning or de-greasing of metallic material by chemical methods other than electrolysis2%
PatentTitleYear
10,879,081Methods of reducing or eliminating defects in tungsten film202010,727,119Process integration approach of selective tungsten via fill202010,395,916In-situ pre-clean for selectivity improvement for selective deposition201910,256,144Process integration approach of selective tungsten via fill20199,947,578Methods for forming low-resistance contacts through integrated process flow systems20189,783,889'Apparatus for variable substrate temperature control'20179,748,105'Tungsten deposition with tungsten hexafluoride (WF6) etchback'20179,653,352'Methods for forming metal organic tungsten for middle of the line (MOL) applications'20179,528,183'Cobalt removal for chamber clean or pre-clean process'20169,169,556'Tungsten growth modulation by controlling surface composition'20159,051,655'Boron ionization for aluminum oxide etch enhancement'20158,920,564'Methods and apparatus for thermal based substrate processing with variable temperature capability'20148,900,999'Low temperature high pressure high H2/WF6 ratio W process for 3D NAND application'20148,865,594'Formation of liner and barrier for tungsten as gate electrode and as contact plug to reduce resistance and enhance device performance'20148,835,311'High temperature tungsten metallization process'20148,617,985'High temperature tungsten metallization process'20138,513,116'Atomic layer deposition of tungsten materials'20138,211,799'Atomic layer deposition of tungsten materials'20128,071,478'Method of depositing tungsten film with reduced resistivity and improved surface morphology'20117,964,505'Atomic layer deposition of tungsten materials'20117,732,327'Vapor deposition of tungsten materials'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2020Patents assigned to APPLIED MATERIALS INC (21)· patent assignee history
2010–2020Based in Palo Alto, CA, US· patent location history
2011–2017Patents assigned to WU KAI (6)· patent assignee history
2011–2017Patents assigned to KHANDELWAL AMIT (5)· patent assignee history
2012–2017Patents assigned to GELATOS AVGERINOS V (4)· patent assignee history
2014–2017Patents assigned to CUVALCI OLKAN (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 21 | 2010–2020 |
| WU KAIself | 6 | 2011–2017 |
| KHANDELWAL AMIT | 5 | 2011–2017 |
| GELATOS AVGERINOS V | 4 | 2012–2017 |
| CUVALCI OLKAN | 2 | 2014–2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Palo Alto, California, US | 21 | 2010–2020 |