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Inventor

Daniel C. Worledge

Inventor
Cortlandt Manor, NY, US

Overview

132→
Patents
2004–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 132 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Nprimary
H10NElectric solid-state devices not otherwise provided for22%
G11CStatic stores21%
H01LSemiconductor devices17%
H10BElectronic memory devices9%
H01FMagnets8%
B82YSpecific uses or applications of nanostructures7%
G01RMeasuring electric variables4%
G06FElectric digital data processing2%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
H10DInorganic electric semiconductor devices2%
PatentTitleYear
10,916,581Multilayered magnetic free layer structure containing an ordered magnetic alloy first magnetic free layer for spin-transfer torque (STT) MRAM202110,839,935Dynamic redundancy for memory202010,734,571Magnetic field sensor based on topological insulator and insulating coupler materials202010,686,123Multilayered magnetic free layer structure for spin-transfer torque (STT) MRAM202010,553,781In-situ annealing and etch back steps to improve exchange stiffness in cobalt iron boride based perpendicular magnetic anisotropy free layers202010,510,390Magnetic exchange coupled MTJ free layer having low switching current and high data retention201910,510,391Magnetic exchange coupled MTJ free layer having low switching current and high data retention201910,468,455Simplified double magnetic tunnel junctions201910,453,509Magnetic exchange coupled MTJ free layer with double tunnel barriers having low switching current and high data retention201910,437,665Bad bit register for memory201910,424,727Spin transfer torque cell for magnetic random access memory201910,394,647Bad bit register for memory201910,374,145In-situ annealing and etch back steps to improve exchange stiffness in cobalt iron boride based perpendicular magnetic anisotropy free layers201910,361,361Thin reference layer for STT MRAM201910,332,576Magnetic exchange coupled MTJ free layer with double tunnel barriers having low switching current and high data retention201910,326,074Spin transfer torque cell for magnetic random access memory201910,294,561Growth of metal on a dielectric201910,236,438Multibit self-reference thermally assisted MRAM201910,229,722Three terminal spin hall MRAM201910,170,178Secure off-chip MRAM201910,170,688Magnetic field sensor based on topological insulator and insulating coupler materials201910,109,786Spin transfer torque magnetic tunnel junction with off-centered current flow201810,096,351Spin hall effect MRAM with self-reference read201810,083,730Thermally-assisted spin transfer torque memory with improved bit error rate performance201810,003,016Perpendicular magnetic anisotropy BCC multilayers20189,963,780Growth of metal on a dielectric20189,960,348In-situ annealing to improve the tunneling magneto-resistance of magnetic tunnel junctions20189,947,383Spin hall write select for magneto-resistive random access memory20189,941,463Magnetic field sensor based on topological insulator and insulating coupler materials20189,941,469Double spin filter tunnel junction20189,917,247'Structure for thermally assisted MRAM'20189,911,483'Thermally-assisted spin transfer torque memory with improved bit error rate performance'20189,892,840'Current constriction for spin torque MRAM'20189,853,205Spin transfer torque magnetic tunnel junction with off-centered current flow20179,853,208In-situ annealing to improve the tunneling magneto-resistance of magnetic tunnel junctions20179,823,858'Nonvolatile memory interface for metadata shadowing'20179,799,826'Current constriction for spin torque MRAM'20179,792,052'Nonvolatile memory interface for metadata shadowing'20179,793,471'Spin transfer torque cell for magnetic random access memory'20179,786,837'Multibit self-reference thermally assisted MRAM'20179,786,836'Multibit self-reference thermally assisted MRAM'20179,773,971'Perpendicular magnetic anisotropy BCC multilayers'20179,715,917'Spin torque MRAM based on Co, Ir synthetic antiferromagnetic multilayer'20179,716,221'Magnetic field sensor based on topological insulator and insulating coupler materials'20179,691,463'Spin hall effect MRAM with self-reference read'20179,660,180'Current constriction for spin torque MRAM'20179,647,204'Spin torque MRAM based on Co, Ir synthetic antiferromagnetic multilayer'20179,620,708'Perpendicular magnetic anisotropy BCC multilayers'20179,614,144'OTP MRAM'20179,577,179'Electrostatically controlled magnetic logic device'20179,577,180'Electrostatically controlled magnetic logic device'20179,569,109'Nonvolatile memory interface for metadata shadowing'20179,564,580'Double synthetic antiferromagnet using rare earth metals and transition metals'20179,515,251'Structure for thermally assisted MRAM'20169,502,641'Double synthetic antiferromagnet using rare earth metals and transition metals'20169,496,018'Nonvolatile memory interface for metadata shadowing'20169,490,422'Current constriction for spin torque MRAM'20169,484,531'Perpendicular magnetic anisotropy BCC multilayers'20169,472,754'In-situ annealing to improve the tunneling magneto-resistance of magnetic tunnel junctions'20169,466,785'Current constriction for spin torque MRAM'20169,406,870'Multibit self-reference thermally assisted MRAM'20169,391,266'Perpendicular magnetic anisotropy BCC multilayers'20169,318,698'Spin transfer torque cell for magnetic random access memory'20169,214,625'Thermally assisted MRAM with increased breakdown voltage using a double tunnel barrier'20159,093,103'Perpendicular magnetization with oxide interface'20159,087,543'Spin torque MRAM having perpendicular magnetization with oxide interface'20159,082,963'Spin transfer torque cell for magnetic random access memory'20159,035,403'Spin-torque magnetoresistive structures'20158,971,103'Thermally-assisted MRAM with ferromagnetic layers with temperature dependent magnetization'20158,947,915'Thermal spin torqure transfer magnetoresistive random access memory'20158,947,917'Thermal spin torque transfer magnetoresistive random access memory'20158,928,100'Spin transfer torque cell for magnetic random access memory'20158,912,614'Magnetic tunnel junction devices having magnetic layers formed on composite, obliquely deposited seed layers'20148,908,425'Thermally-assisted MRAM with ferromagnetic layers with temperature dependent magnetization'20148,896,041'Spin hall effect assisted spin transfer torque magnetic random access memory'20148,889,433'Spin hall effect assisted spin transfer torque magnetic random access memory'20148,871,531'Parallel shunt paths in thermally assisted magnetic memory cells'20148,866,207'Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memory'20148,852,762'Magnetic random access memory with synthetic antiferromagnetic storage layers and non-pinned reference layers'20148,852,677'Magnetic random access memory with synthetic antiferromagnetic storage layers and non-pinned reference layers'20148,835,889'Parallel shunt paths in thermally assisted magnetic memory cells'20148,836,058'Electrostatic control of magnetic devices'20148,796,045'Magnetoresistive random access memory'20148,785,966'Magnetic tunnel junction transistor devices'20148,750,033'Reading a cross point cell array'20148,686,520'Spin-torque magnetoresistive structures'20148,536,668'Seed layer and free magnetic layer for perpindicular anisotropy in a spin-torque magnetic random access memory'20138,482,968'Non-volatile magnetic tunnel junction transistor'20138,456,895'Magnonic magnetic random access memory device'20138,406,040'Spin-torque based memory device using a magnesium oxide tunnel barrier'20138,370,714'Reference cells for spin torque based memory device'20138,358,153'Magnetic logic circuits formed with tapered magnetic wires'20138,331,139'Increased magnetic damping for toggle MRAM'20128,324,697'Seed layer and free magnetic layer for perpendicular anisotropy in a spin-torque magnetic random access memory'20128,283,741'Optimized free layer for spin torque magnetic random access memory'20128,233,249'Magnetic tunnel junction transistor device'20128,107,285'Read direction for spin-torque based memory device'20128,102,174'Techniques for electrically characterizing tunnel junction film stacks with little or no processing'20128,034,637'Techniques for coupling in semiconductor devices'20118,027,185'Techniques for electrically characterizing tunnel junction film stacks with little or no processing'20118,004,278'Techniques for electrically characterizing tunnel junction film stacks with little or no processing'20117,982,249'Magnetic tunnel junction transistor'20117,920,416'Increased magnetic damping for toggle MRAM'20117,911,829'Scalable magnetic memory devices'20117,907,440'Data writing to scalable magnetic memory devices'20117,901,588'MRAM wet etch method'20117,893,470'Techniques for coupling in semiconductor devices'20117,894,247'Scalable magnetic random access memory device'20117,880,250'Magnetic tunnel junction transistor'20117,791,152'Magnetic tunnel junction transistor'20107,685,708'Multipoint nanoprobe method of making'20107,622,735'Wafer for electrically characterizing tunnel junction film stacks with little or no processing'20097,619,409'Methods and apparatus for electrically characterizing magnetic tunnel junctions having three metal layers separated by two dielectric layers'20097,535,069'Magnetic tunnel junction with enhanced magnetic switching characteristics'20097,506,236'Techniques for operating semiconductor devices'20097,433,225'Scalable magnetic random access memory device'20087,337,536'Multipoint nanoprobe and method for fabrication'20087,301,801'Tuned pinned layers for magnetic tunnel junctions with multicomponent free layers'20077,274,057'Techniques for spin-flop switching with offset field'20077,258,809'MRAM wet etch method'20077,205,163'Curvature anisotropy in magnetic bits for a magnetic random access memory'20077,102,916'Method and structure for selecting anisotropy axis angle of MRAM device for reduced power consumption'20067,081,658'Techniques for reducing Neel coupling in toggle switching semiconductor devices'20067,045,838'Techniques for coupling in semiconductor devices and magnetic device using these techniques'20067,034,519'High frequency measurement for current-in-plane-tunneling'20067,009,414'Atomic force microscope and method for determining properties of a sample surface using an atomic force microscope'20067,002,194'Via AP switching'20066,987,691'Easy axis magnetic amplifier'20066,975,124'Multipoint nanoprobe'20056,943,571'Reduction of positional errors in a four point probe resistance measurement'20056,927,569'Techniques for electrically characterizing tunnel junction film stacks with little or no processing'20056,833,573'Curvature anisotropy in magnetic bits for a magnetic random access memory'2004

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2004–2021Patents assigned to IBM (127)· patent assignee history
2004–2013Based in Poughquag, NY, US· patent location history
2006–2012Patents assigned to INFINEON TECHNOLOGIES CORP (5)· patent assignee history
2007–2020Based in Cortlandt Manor, NY, US· patent location history
2012–2015Patents assigned to WORLEDGE DANIEL C (14)· patent assignee history
2012–2015Based in Yorktown Heights, NY, US· patent location history
2014–2015Patents assigned to NOWAK JANUSZ J (4)· patent assignee history
2016–2019Patents assigned to CROCUS TECHNOLOGY SA (6)· patent assignee history
2017–2018Based in New York, NY, US· patent location history
2018–2021Based in San Jose, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
IBM1272004–2021
WORLEDGE DANIEL Cself142012–2015
CROCUS TECHNOLOGY SA62016–2019
INFINEON TECHNOLOGIES CORP52006–2012
NOWAK JANUSZ J42014–2015
Locations
LocationPatentsSpan
Cortlandt Manor, New York, US812007–2020
Poughquag, New York, US272004–2013
San Jose, California, US142018–2021
Yorktown Heights, New York, US72012–2015
New York, New York, US22017–2018