Inventor
Chih-Chien Chi
Inventor
Hsinchu, TW
Overview
Patents· 29 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices32%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1032%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
H10DInorganic electric semiconductor devices8%
C23CCoating metallic material5%
H01JElectric discharge tubes or discharge lamps2%
Y10TTechnical subjects covered by former us classification1%
PatentTitleYear
11,004,793Method of forming an interconnect structure having an air gap and structure thereof202110,840,134Interconnect structure and method202010,790,142Selective capping processes and structures formed thereby202010,770,288Selective capping processes and structures formed thereby202010,727,350Multi-layer film device and method202010,727,118Method for manufacturing semiconductor device and pre-clean apparatus for semiconductor device202010,340,223Method of forming an interconnect structure having an air gap and structure thereof201910,269,627Interconnect structure and method201910,199,500Multi-layer film device and method201910,103,099Semiconductor devices and methods of forming same20189,917,058'Method of forming an interconnect structure having an air gap and structure thereof'20189,887,073'Physical vapor deposition system and physical vapor depositing method using the same'20189,873,944Metal capping process and processing platform thereof20189,805,951'Method of integration process for metal CMP'20179,754,822'Interconnect structure and method'20179,754,882'Interconnect structure having air gap and method of forming the same'20179,640,428'Self-aligned repairing process for barrier layer'20179,576,892'Semiconductor devices and methods of forming same'20179,567,668'Plasma apparatus, magnetic-field controlling method, and semiconductor manufacturing method'20179,543,198'Structure and method for forming interconnect structure'20179,514,928'Selective repairing process for barrier layer'20169,496,169'Method of forming an interconnect structure having an air gap and structure thereof'20169,487,864'Metal capping process and processing platform thereof'20169,472,449'Semiconductor structure with inlaid capping layer and method of manufacturing the same'20169,343,294'Interconnect structure having air gap and method of forming the same'20169,324,606'Self-aligned repairing process for barrier layer'20169,218,986'Hard mask edge cover scheme'20159,184,134'Method of manufacturing a semiconductor device structure'20158,940,635'Structure and method for forming interconnect structure'2015Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2015–2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (26)· patent assignee history
2015–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (4)· patent assignee history
2015–2021Based in Hsinchu, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 26 | 2015–2021 |
| TAIWAN SEMICONDUCTOR MFG | 4 | 2015–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 29 | 2015–2021 |