Inventor

Daniel A. Carl

Inventor
Pleasanton, CA, US

Overview

26→
Patents
1995–2010
Patent span
Electricity
Primary field (CPC H)

Patents· 26 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1018%
B24BMachines, devices, or processes for grinding or polishing11%
B82YSpecific uses or applications of nanostructures8%
C23CCoating metallic material7%
C25DProcesses for the electrolytic or electrophoretic production of coatings5%
H10BElectronic memory devices5%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
B23HWorking of metal by the action of a high concentration of electric current on a workpiece using an electrode which takes the place of a tool4%
B24DTools for grinding, buffing or sharpening4%
PatentTitleYear
7,772,121'Method of forming a trench structure'20107,427,568'Method of forming an interconnect structure'20087,375,023'Method and apparatus for chemical mechanical polishing of semiconductor substrates'20087,344,432'Conductive pad with ion exchange membrane for electrochemical mechanical polishing'20087,323,095'Integrated multi-step gap fill and all feature planarization for conductive materials'20087,311,592'Conductive polishing article for electrochemical mechanical polishing'20077,137,879'Conductive polishing article for electrochemical mechanical polishing'20067,115,516'Method of depositing a material layer'20067,066,800'Conductive polishing article for electrochemical mechanical polishing'20067,060,606'Method and apparatus for chemical mechanical polishing of semiconductor substrates'20066,988,942'Conductive polishing article for electrochemical mechanical polishing'20066,896,776'Method and apparatus for electro-chemical processing'20056,893,548'Method of conditioning electrochemical baths in plating technology'20056,884,724'Method for dishing reduction and feature passivation in polishing processes'20056,821,881'Method for chemical mechanical polishing of semiconductor substrates'20046,811,680'Planarization of substrates using electrochemical mechanical polishing'20046,773,507'Apparatus and method for fast-cycle atomic layer deposition'20046,677,239'Methods and compositions for chemical mechanical polishing'20046,436,267'Method for achieving copper fill of high aspect ratio interconnect features'20026,372,633'Method and apparatus for forming metal interconnects'20026,362,099'Method for enhancing the adhesion of copper deposited by chemical vapor deposition'20026,258,223'In-situ electroless copper seed layer enhancement in an electroplating system'20015,766,968'Micro mask comprising agglomerated material'19985,672,537'Method for preparing a narrow angle defined trench in a substrate'19975,610,441'Angle defined trench conductor for a semiconductor device'19975,466,626'Micro mask comprising agglomerated material'1995

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1995–1998Patents assigned to IBM (4)· patent assignee history
1995–1998Based in Poughkeepsie, NY, US· patent location history
1997Based in Santa Clara, CA, US· patent location history
2001–2010Patents assigned to APPLIED MATERIALS INC (22)· patent assignee history
2001–2010Based in Pleasanton, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
APPLIED MATERIALS INC222001–2010
IBM41995–1998
Locations
LocationPatentsSpan
Pleasanton, California, US222001–2010
Poughkeepsie, New York, US21995–1998
Santa Clara, California, US21997