Inventor
Rozalie Schachter
Inventor
Flushing, NY, US
Overview
Patents· 15 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Kprimary
H10KOrganic electric solid-state devices16%
H10DInorganic electric semiconductor devices14%
C03CChemical composition of glasses, glazes or vitreous enamels10%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
C01BNon-metallic elements7%
C23CCoating metallic material7%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation7%
C09KMaterials for miscellaneous applications, not provided for elsewhere5%
C30BSingle-crystal growth5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
PatentTitleYear
5,247,349'Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure'19935,032,472'Films of catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them'19914,867,952'Cracking traps for process gas components having a condensed phase'19894,822,581'Catenated phosphorus materials and their preparation'19894,818,636'Films of catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them'19894,761,300'Method of vacuum depostion of pnictide films on a substrate using a pnictide bubbler and a sputterer'19884,746,500'Pnictide trap for vacuum systems'19884,732,659'Sputtering method for making thin film field effect transistor utilizing a polypnictide semiconductor'19884,713,192'Doping of catenated phosphorus materials'19874,696,828'Passivation of InP by plasma deposited phosphorus'19874,620,968'Monoclinic phosphorus formed from vapor in the presence of an alkali metal'19864,613,485'Pnictide trap for vacuum systems'19864,558,340'Thin film field effect transistors utilizing a polypnictide semiconductor'19854,509,066'Sputtered semiconducting films of catenated phosphorus material and devices formed therefrom'19854,508,931'Catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them'1985Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1985–1993Patents assigned to STAUFFER CHEMICAL CO (14)· patent assignee history
1985–1993Based in Flushing, NY, US· patent location history
1985–1991Based in New York, NY, US· patent location history
1989Patents assigned to AMERICAN CYANAMID CO (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| STAUFFER CHEMICAL CO | 14 | 1985–1993 |
| AMERICAN CYANAMID CO | 1 | 1989 |
Locations
| Location | Patents | Span |
|---|---|---|
| Flushing, New York, US | 9 | 1985–1993 |
| New York, New York, US | 6 | 1985–1991 |