Inventor

Hidetoshi Nojiri

Inventor

Hadano, JP

Overview

35→

Patents

1985–2011

Patent span

Electricity

Primary field (CPC H)

Patents· 35 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Sprimary

H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light21%

G02BOptical elements, systems or apparatus14%

B82YSpecific uses or applications of nanostructures7%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation6%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%

B41JTypewriters4%

C25DProcesses for the electrolytic or electrophoretic production of coatings3%

C25FProcesses for the electrolytic removal of materials from objects3%

G01NInvestigating or analysing materials by determining their chemical or physical properties3%

PatentTitleYear

8,067,101'Capacitor electrode and method of manufacturing the same'2011 7,583,413'Signal output and image forming apparatus with method of judging sheet type by impact detection'2009 7,426,062'Signal output apparatus, image forming apparatus and information output apparatus'2008 6,666,943'Film transfer method'2003 6,541,386'Method for producing a structure with narrow pores'2003 6,214,738'Method for producing narrow pores and structure having the narrow pores, and narrow pores and structure produced by the method'2001 5,926,497'Diffraction grating with alternately-arranged different regions, optical semiconductor device with the diffraction grating, and apparatus and optical communication system using the same'1999 5,681,448'Electrochemical process and system for etching semiconductor substrates'1997 5,613,020'Optical devices having a periodical current restraint layer and optical communication systems using the optical device'1997 5,444,351'System and method for controlling induction motor applicable to electric motor-driven vehicle'1995 5,298,739'Photodetector capable of sweeping out unwanted carriers and an optical communication system including the same'1994 5,287,422'Integrated type optical node and optical information system using the same'1994 5,285,514'Waveguide type photodetector and a method of fabricating the same'1994 5,222,163'Integrated type optical node and optical information system using the same'1993 5,220,573'Optical apparatus using wavelength selective photocoupler'1993 5,196,717'Field effect transistor type photo-detector'1993 5,173,149'Method of etching semiconductor substrate'1992 5,172,207'Semiconductor wafer to be etched electrochemically'1992 5,167,778'Electrochemical etching method'1992 5,140,149'Optical apparatus using wavelength selective photocoupler'1992 5,109,444'Integrated type optical node and optical information system using the same'1992 5,032,710'Photodetector to detect a light in different wavelength regions through clad layer having different thickness portions'1991 4,971,415'Multibeam emitting device'1990 4,962,062'Method of tightly joining two semiconductor substrates'1990 4,836,888'Method of chemically etching semiconductor substrate'1989 4,829,534'Semiconductor laser device having a semiconductor region for creating a depletion layer in a laser active layer for controlling current flow therethrough'1989 4,828,644'Etching device for semiconductor wafers'1989 4,815,027'Optical operation apparatus for effecting parallel signal processing by detecting light transmitted through a filter in the form of a matrix'1989 4,799,229'Semiconductor laser array'1989 4,796,067'Semiconductor device having a superlattice structure'1989 4,794,611'Semiconductor laser having superlattice structure'1988 4,794,609'Semiconductor laser provided with a plurality of lasers in the form of an array'1988 4,706,254'Semiconductor device and its fabrication'1987 4,640,585'Semiconductor thin film lens'1987 4,553,317'Method of obtaining an impact ionization coefficient rate by junction of different kinds of semiconductors'1985

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1985–2009Patents assigned to CANON KK (26)· patent assignee history

1985–1990Based in Matsudo, JP· patent location history

1989–2011Patents assigned to NISSAN MOTOR (9)· patent assignee history

1989–2011Based in Yokosuka, JP· patent location history

1991–2003Based in Hadano, JP· patent location history

1992–2009Based in Kanagawa, JP· patent location history

1997Based in Yokohama, JP· patent location history

2011Patents assigned to HAMM DIDIER (1)· patent assignee history

2011Patents assigned to HATANO MASAHARU (1)· patent assignee history

2011Patents assigned to HISHITANI YOSHIKO (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
CANON KK	26	1985–2009
NISSAN MOTOR	9	1989–2011
HAMM DIDIER	1	2011
HATANO MASAHARU	1	2011
HISHITANI YOSHIKO	1	2011

Locations

Location	Patents	Span
Hadano, JP	13	1991–2003
Matsudo, JP	9	1985–1990
Yokosuka, JP	6	1989–2011
Kanagawa, JP	4	1992–2009
Yokohama, JP	1	1997