Inventor
Conrad A. Barile
Inventor
Wappingers Falls, NY, US
Overview
Patents· 5 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1020%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests20%
G01RMeasuring electric variables10%
G06FElectric digital data processing10%
H10DInorganic electric semiconductor devices10%
Y10TTechnical subjects covered by former us classification10%
PatentTitleYear
8,053,257'Method for prediction of premature dielectric breakdown in a semiconductor'20117,138,714'Via barrier layers continuous with metal line barrier layers at notched or dielectric mesa portions in metal lines'20066,972,209'Stacked via-stud with improved reliability in copper metallurgy'20054,243,435'Bipolar transistor fabrication process with an ion implanted emitter'19814,060,427'Method of forming an integrated circuit region through the combination of ion implantation and diffusion steps'1977Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1977–2011Patents assigned to IBM (5)· patent assignee history
1977–2011Based in Wappingers Falls, NY, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 5 | 1977–2011 |
Locations
| Location | Patents | Span |
|---|---|---|
| Wappingers Falls, New York, US | 5 | 1977–2011 |