Inventor

Yoshinori Morisada

Inventor

Tama, JP

Overview

19→

Patents

2002–2017

Patent span

Electricity

Primary field (CPC H)

Patents· 19 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%

B05DProcesses for applying fluent materials to surfaces, in general19%

C23CCoating metallic material17%

C09DCoating compositions, e.g. paints, varnishes or lacquers13%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%

H01JElectric discharge tubes or discharge lamps5%

C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds3%

G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices3%

Y10TTechnical subjects covered by former us classification3%

C08JWorking-up1%

PatentTitleYear

9,708,507'Method for improving chemical resistance of polymerized film, polymerized film forming method, film forming apparatus, and electronic product manufacturing method'2017 9,422,452'Polymerized film forming method'2016 7,799,134'Shower plate having projections and plasma CVD apparatus using same'2010 7,638,441'Method of forming a carbon polymer film using plasma CVD'2009 7,504,344'Method of forming a carbon polymer film using plasma CVD'2009 7,470,633'Method of forming a carbon polymer film using plasma CVD'2008 7,410,915'Method of forming carbon polymer film using plasma CVD'2008 7,381,291'Dual-chamber plasma processing apparatus'2008 7,064,088'Method for forming low-k hard film'2006 6,881,683'Insulation film on semiconductor substrate and method for forming same'2005 6,852,650'Insulation film on semiconductor substrate and method for forming same'2005 6,784,123'Insulation film on semiconductor substrate and method for forming same'2004 6,759,344'Method for forming low dielectric constant interlayer insulation film'2004 6,740,367'Plasma CVD film-forming device'2004 6,631,692'Plasma CVD film-forming device'2003 6,559,520'Siloxan polymer film on semiconductor substrate'2003 6,514,880'Siloxan polymer film on semiconductor substrate and method for forming same'2003 6,383,955'Silicone polymer insulation film on semiconductor substrate and method for forming the film'2002 6,352,945'Silicone polymer insulation film on semiconductor substrate and method for forming the film'2002

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2002–2010Patents assigned to ASM JAPAN (17)· patent assignee history

2002–2010Based in Tama, JP· patent location history

2005Based in Tami, JP· patent location history

2008Patents assigned to SAMSUNG ELECTRONICS CO LTD (1)· patent assignee history

2016–2017Patents assigned to TOKYO ELECTRON LTD (2)· patent assignee history

2016–2017Based in Nirasaki, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
ASM JAPAN	17	2002–2010
TOKYO ELECTRON LTD	2	2016–2017
SAMSUNG ELECTRONICS CO LTD	1	2008

Locations

Location	Patents	Span
Tama, JP	16	2002–2010
Nirasaki, JP	2	2016–2017
Tami, JP	1	2005