Inventor
Feng-Cheng Yang
Inventor
Hsinchu County, TW
Overview
Patents· 6 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices25%
H10DInorganic electric semiconductor devices25%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
H10BElectronic memory devices10%
G06FElectric digital data processing5%
G06QInformation and communication technology [ict] specially adapted for administrative, commercial, financial, managerial or supervisory purposes5%
PatentTitleYear
11,043,425Methods of reducing parasitic capacitance in semiconductor devices202111,031,498Semiconductor structure with improved source drain epitaxy202111,018,224Semiconductor device with epitaxial source/drain202111,018,245Epitaxial structures for fin-like field effect transistors202111,018,134Semiconductor device and method for manufacturing the same202110,437,920Aided translation method and device thereof2019Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2019Patents assigned to WUXI WUXIN NETWORK TECH CO LTD (1)· patent assignee history
2019Based in Jiangsu, CN· patent location history
2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (5)· patent assignee history
2021Based in Hsinchu County, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 5 | 2021 |
| WUXI WUXIN NETWORK TECH CO LTD | 1 | 2019 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu County, TW | 5 | 2021 |
| Jiangsu, CN | 1 | 2019 |