Inventor
Yoshihide Senzaki
Inventor
Carlsbad, CA, US
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C23Cprimary
C23CCoating metallic material50%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
C07FAcyclic, carbocyclic or heterocyclic compounds containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur, selenium or tellurium11%
H10DInorganic electric semiconductor devices8%
C07CAcyclic or carbocyclic compounds3%
C30BSingle-crystal growth3%
H01LSemiconductor devices3%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
PatentTitleYear
9,269,574'Methods of fabricating dielectric films from metal amidinate precursors'20169,011,973'Methods for depositing oxygen deficient metal films'20157,470,470'System and method for forming multi-component dielectric films'20087,335,569'In-situ formation of metal insulator metal capacitors'20087,205,247'Atomic layer deposition of hafnium-based high-k dielectric'20076,933,011'Two-step atomic layer deposition of copper layers'20056,713,846'Multilayer high dielectric films'20046,616,972'Synthesis of metal oxide and oxynitride'20036,537,613'Process for metal metalloid oxides and nitrides with compositional gradients'20036,503,561'Liquid precursor mixtures for deposition of multicomponent metal containing materials'20036,500,499'Deposition and annealing of multicomponent ZrSnTi and HfSnTi oxide thin films using solventless liquid mixture of precursors'20026,319,567'Synthesis of tantalum nitride'20016,238,734'Liquid precursor mixtures for deposition of multicomponent metal containing materials'20016,096,913'Production of metal-ligand complexes'20006,090,960'Precursor with (methoxy) (methyl) silylolefin ligand to deposit copper and method same'20006,046,364'Regeneration of metal CVD precursors'20005,767,301'Precursor with (alkyloxy)(alkyl)-silylolefin ligand to deposit copper'19985,744,192'Method of using water vapor to increase the conductivity of cooper desposited with cu(hfac)TMVS'19985,372,849'Chemical vapor deposition of iron, ruthenium, and osmium'19945,314,727'Chemical vapor deposition of iron, ruthenium, and osmium'1994Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1994Based in Minneapolis, MN, US· patent location history
1998–2000Patents assigned to SHARP KK (3)· patent assignee history
1998Patents assigned to SHARP MICROELECT TECH INC (2)· patent assignee history
1998–2000Based in Vancouver, WA, US· patent location history
2000–2003Patents assigned to AIR PROD & CHEM (8)· patent assignee history
2000–2003Based in Carlsbad, CA, US· patent location history
2004–2008Patents assigned to AVIZA TECH INC (5)· patent assignee history
2004–2016Based in Aptos, CA, US· patent location history
2008Based in Austin, TX, US· patent location history
2015–2016Patents assigned to APPLIED MATERIALS INC (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| AIR PROD & CHEM | 8 | 2000–2003 |
| AVIZA TECH INC | 5 | 2004–2008 |
| SHARP KK | 3 | 1998–2000 |
| APPLIED MATERIALS INC | 2 | 2015–2016 |
| SHARP MICROELECT TECH INC | 2 | 1998 |
Locations
| Location | Patents | Span |
|---|---|---|
| Carlsbad, California, US | 8 | 2000–2003 |
| Aptos, California, US | 6 | 2004–2016 |
| Vancouver, Washington, US | 3 | 1998–2000 |
| Minneapolis, Minnesota, US | 2 | 1994 |
| Austin, Texas, US | 1 | 2008 |