Inventor

Hideo Fujisawa

Inventor

Ushiku, JP

Overview

18→

Patents

1987–2020

Patent span

Electricity

Primary field (CPC H)

Patents· 18 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C30Bprimary

C30BSingle-crystal growth21%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%

H01LSemiconductor devices13%

H10DInorganic electric semiconductor devices13%

H10HInorganic light-emitting semiconductor devices having potential barriers11%

Y02PClimate change mitigation technologies in the production or processing of goods7%

C01BNon-metallic elements6%

Y10TTechnical subjects covered by former us classification6%

C01PIndexing scheme relating to structural and physical aspects of solid inorganic compounds4%

H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light4%

PatentTitleYear

10,796,904Conductive C-plane GaN substrate2020 10,734,485Gallium nitride substrate and manufacturing method of nitride semiconductor crystal2020 10,720,326Method for growing GaN crystal and C-plane GaN substrate2020 10,655,244GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor device2020 10,526,726Method for producing nitride crystal and nitride crystal2020 10,475,887Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device2019 10,309,038Crystal of nitride of group-13 metal on periodic table, and method for producing the same2019 10,301,743GaN single crystal and method for manufacturing GaN single crystal2019 10,066,319GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor device2018 9,890,474'Crystal of nitride of group-13 metal on periodic table, and method for producing the same'2018 9,673,046'Gallium nitride substrate and manufacturing method of nitride semiconductor crystal'2017 9,518,337'Method for producing nitride crystal and nitride crystal'2016 9,163,324'Method for producing nitride crystal'2015 9,096,945'Method for producing nitride crystal and nitride crystal'2015 8,574,532'Method for producing semiconductor crystal, apparatus for crystal production and group 13 element nitride semiconductor crystal'2013 D0368046'Watch band'1996 D0296245'Lighter'1988 D0289801'Lighter'1987

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1987–1988Patents assigned to FUJISAWA COMPANY LTD (2)· patent assignee history

1987–2020Based in Tokyo, JP· patent location history

1996Based in Kashiwa, JP· patent location history

2013–2020Patents assigned to MITSUBISHI CHEM CORP (15)· patent assignee history

2013–2015Patents assigned to FUJISAWA HIDEO (2)· patent assignee history

2013–2015Patents assigned to MIKAWA YUTAKA (2)· patent assignee history

2013–2020Based in Ushiku, JP· patent location history

2015Patents assigned to KAMADA KAZUNORI (1)· patent assignee history

2015–2019Based in Ibaraki, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
MITSUBISHI CHEM CORP	15	2013–2020
FUJISAWA COMPANY LTD	2	1987–1988
FUJISAWA HIDEOself	2	2013–2015
MIKAWA YUTAKA	2	2013–2015
KAMADA KAZUNORI	1	2015

Locations

Location	Patents	Span
Ushiku, JP	9	2013–2020
Tokyo, JP	5	1987–2020
Ibaraki, JP	3	2015–2019
Kashiwa, JP	1	1996