Inventor

Manoj K. Bhattacharyya

Inventor

Cupertino, CA, US

Overview

1989–2020

Patent span

Physics

Primary field (CPC G)

Patents· 79 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary

G11CStatic stores37%

H10BElectronic memory devices14%

H10NElectric solid-state devices not otherwise provided for9%

B82YSpecific uses or applications of nanostructures6%

G03GElectrography4%

H01FMagnets4%

B41MPrinting, duplicating, marking, or copying processes3%

G01DMeasuring not specially adapted for a specific variable3%

G11BInformation storage based on relative movement between record carrier and transducer3%

G01RMeasuring electric variables2%

PatentTitleYear

10,859,407Motion sensing using hall voltage signals2020 10,809,317Spatially dependent correction of magnetic field sensor readings2020 10,557,724Angle detection of a rotating system using a single magnet and multiple hall sensors2020 10,436,607Motion sensing using hall voltage signals2019 10,168,644Composite coating and substrate used in liquid electrophotographic printing and method2019 9,752,877'Electronic device having electronic compass with demagnetizing coil and annular flux concentrating yokes'2017 9,539,822'Digital printers'2017 9,423,709'Polymer coated toner pigments for electrophotographic printing'2016 8,774,682'Method for measuring conductivity of ink'2014 8,764,894'Ink dispersion'2014 8,372,494'Inkjet print media'2013 8,337,978'Recording material containing nonionic surfactants'2012 8,246,754'Process for removing ink from printed substrate'2012 8,055,160'Liquid electrophotographic printer'2011 7,799,581'Methods of forming magnetic memory devices'2010 7,428,347'Optical signal transmission transducer'2008 7,422,912'Magnetic memory device and methods for making same'2008 7,395,020'Imaging methods, imaging devices, transfer assemblies, and transfer member lubrication assemblies'2008 7,239,568'Current threshold detector'2007 7,193,259'Thermally written magnetic memory device'2007 7,187,580'Magnetic memory with structure providing reduced coercivity'2007 7,078,244'Multi-bit MRAM device with switching nucleation sites'2006 7,079,438'Controlled temperature, thermal-assisted magnetic memory device'2006 6,979,998'Magnetic filter'2005 6,944,053'Magnetic memory with structure providing reduced coercivity'2005 6,930,369'Thin film device and a method of providing thermal assistance therein'2005 6,927,995'Multi-bit MRAM device with switching nucleation sites'2005 6,919,594'Magneto resistive storage device having a magnetic field sink layer'2005 6,911,710'Multi-bit magnetic memory cells'2005 6,905,888'Magnetic memory element having controlled nucleation site in data layer'2005 6,906,947'In-plane toroidal memory cell with vertically stepped conductors'2005 6,870,758'Magnetic memory device and methods for making same'2005 6,867,468'Magnetic shielding for reducing magnetic interference'2005 6,865,107'Magnetic memory device'2005 6,862,212'Multi-bit magnetic memory cells'2005 6,819,586'Thermally-assisted magnetic memory structures'2004 6,808,940'Magnetic shielding for reducing magnetic interference'2004 6,803,616'Magnetic memory element having controlled nucleation site in data layer'2004 6,794,695'Magneto resistive storage device having a magnetic field sink layer'2004 6,795,281'Magneto-resistive device including soft synthetic ferrimagnet reference layer'2004 6,791,872'Method and article for concentrating fields at sense layers'2004 6,791,874'Memory device capable of calibration and calibration methods therefor'2004 6,791,857'Method and article for concentrating fields at sense layers'2004 6,791,865'Memory device capable of calibration and calibration methods therefor'2004 6,785,160'Method of providing stability of a magnetic memory cell'2004 6,775,196'Magnetic memory having a temperature compensated write circuit'2004 6,765,819'Magnetic memory device having improved switching characteristics'2004 6,756,239'Method for constructing a magneto-resistive element'2004 6,740,948'Magnetic shielding for reducing magnetic interference'2004 6,740,947'MRAM with asymmetric cladded conductor'2004 6,727,105'Method of fabricating an MRAM device including spin dependent tunneling junction memory cells'2004 6,724,027'Magnetic shielding for MRAM devices'2004 6,667,901'Dual-junction magnetic memory device and read method'2003 6,661,688'Method and article for concentrating fields at sense layers'2003 6,646,910'Magnetic memory using reverse magnetic field to improve half-select margin'2003 6,643,213'Write pulse circuit for a magnetic memory'2003 6,607,924'Solid-state memory with magnetic storage cells'2003 6,608,790'Write current compensation for temperature variations in memory arrays'2003 6,597,049'Conductor structure for a magnetic memory'2003 6,590,806'Multibit magnetic memory element'2003 6,577,549'Write current compensation for temperature variations in memory arrays'2003 6,564,742'Over-temperature warning device'2003 6,507,513'Using delayed electrical pulses with magneto-resistive devices'2003 6,504,221'Magneto-resistive device including soft reference layer having embedded conductors'2003 6,479,353'Reference layer structure in a magnetic storage cell'2002 6,466,471'Low power MRAM memory array'2002 6,424,565'Solid-state memory with magnetic storage cells'2002 6,385,083'MRAM device including offset conductors'2002 6,297,983'Reference layer structure in a magnetic storage cell'2001 6,236,590'Optimal write conductors layout for improved performance in MRAM'2001 6,172,904'Magnetic memory cell with symmetric switching characteristics'2001 6,169,686'Solid-state memory with magnetic storage cells'2001 6,134,139'Magnetic memory structure with improved half-select margin'2000 6,097,626'MRAM device using magnetic field bias to suppress inadvertent switching of half-selected memory cells'2000 5,982,660'Magnetic memory cell with off-axis reference layer orientation for improved response'1999 5,930,087'Robust recording head for near-contact operation'1999 5,491,606'Planar magnetoresistive head with an improved gap structure'1996 5,434,733'Planar head having separate read and write gaps'1995 4,881,143'Compensated magneto-resistive read head'1989

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1989–2003Patents assigned to HEWLETT PACKARD CO (17)· patent assignee history

1989–2020Based in Cupertino, CA, US· patent location history

1995–1996Based in Sunnyvale, CA, US· patent location history

2003–2019Patents assigned to HEWLETT PACKARD DEVELOPMENT CO (49)· patent assignee history

2004Based in Cupertin, CA, US· patent location history

2011–2019Based in Palo Alto, CA, US· patent location history

2012–2017Patents assigned to BHATTACHARYYA MANOJ K (7)· patent assignee history

2012–2017Patents assigned to NG HOU T (5)· patent assignee history

2017–2020Patents assigned to APPLE INC (5)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
HEWLETT PACKARD DEVELOPMENT CO	49	2003–2019
HEWLETT PACKARD CO	17	1989–2003
BHATTACHARYYA MANOJ Kself	7	2012–2017
APPLE INC	5	2017–2020
NG HOU T	5	2012–2017

Locations

Location	Patents	Span
Cupertino, California, US	67	1989–2020
Palo Alto, California, US	9	2011–2019
Sunnyvale, California, US	2	1995–1996
Cupertin, California, US	1	2004