Inventor

Anthony Mowry

Inventor
Buda, TX, US

Overview

23→
Patents
2010–2014
Patent span
Electricity
Primary field (CPC H)

Patents· 23 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices48%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
G06FElectric digital data processing5%
H10NElectric solid-state devices not otherwise provided for5%
Y02DClimate change mitigation technologies in information and communication technologies [ict], i.e. information and communication technologies aiming at the reduction of their own energy use5%
G01KMeasuring temperature3%
H10BElectronic memory devices3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
PatentTitleYear
8,796,807'Temperature monitoring in a semiconductor device by using a PN junction based on silicon/germanium materials'20148,665,592'Heat management using power management information'20148,564,120'Heat dissipation in temperature critical device areas of semiconductor devices by heat pipes connecting to the substrate backside'20138,530,894'Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regions'20138,507,351'Dopant profile tuning for MOS devices by adapting a spacer width prior to implantation'20138,373,244'Temperature monitoring in a semiconductor device by thermocouples distributed in the contact structure'20138,227,266'Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regions'20128,212,184'Cold temperature control in a semiconductor device'20128,129,236'Method for creating tensile strain by applying stress memorization techniques at close proximity to the gate electrode'20128,093,634'In situ formed drain and source regions in a silicon/germanium containing transistor device'20128,064,197'Heat management using power management information'20118,048,330'Method of forming an interlayer dielectric material having different removal rates during CMP'20117,977,179'Dopant profile tuning for MOS devices by adapting a spacer width prior to implantation'20117,939,399'Semiconductor device having a strained semiconductor alloy concentration profile'20117,923,338'Increasing stress transfer efficiency in a transistor by reducing spacer width during the drain/source implantation sequence'20117,906,385'Method for selectively forming strain in a transistor by a stress memorization technique without adding additional lithography steps'20117,879,667'Blocking pre-amorphization of a gate electrode of a transistor'20117,811,876'Reduction of memory instability by local adaptation of re-crystallization conditions in a cache area of a semiconductor device'20107,790,537'Method for creating tensile strain by repeatedly applied stress memorization techniques'20107,772,077'Method of forming a semiconductor structure comprising a field effect transistor having a stressed channel region'20107,745,337'Method of optimizing sidewall spacer size for silicide proximity with in-situ clean'20107,741,663'Air gap spacer formation'20107,713,763'Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regions'2010

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2010–2013Patents assigned to GLOBALFOUNDRIES INC (16)· patent assignee history
2010–2014Patents assigned to ADVANCED MICRO DEVICES INC (7)· patent assignee history
2010–2014Based in Buda, TX, US· patent location history
2010–2011Based in Dresden, DE· patent location history
2012–2014Patents assigned to MOWRY ANTHONY (9)· patent assignee history
2012–2013Patents assigned to SCOTT CASEY (5)· patent assignee history
2012–2013Patents assigned to GEHRING ANDREAS (4)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
GLOBALFOUNDRIES INC162010–2013
MOWRY ANTHONYself92012–2014
ADVANCED MICRO DEVICES INC72010–2014
SCOTT CASEY52012–2013
GEHRING ANDREAS42012–2013
Locations
LocationPatentsSpan
Buda, Texas, US192010–2014
Dresden, DE42010–2011