Inventor
HUANG-YI HUANG
Inventor
TW
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices44%
H10DInorganic electric semiconductor devices44%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
PatentTitleYear
12,512,324Selective formation of titanium silicide and titanium nitride by hydrogen gas control202511,972,951Selective formation of titanium silicide and titanium nitride by hydrogen gas control202411,444,028Contact structure and formation thereof202211,295,956Selective formation of titanium silicide and titanium nitride by hydrogen gas control2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2025Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (4)· patent assignee history
2022–2025Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 4 | 2022–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 4 | 2022–2025 |