Inventor

Toshiro Usami

Inventor

Yokohama, JP

Overview

14→

Patents

1985–1997

Patent span

Electricity

Primary field (CPC H)

Patents· 14 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices34%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests13%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation6%

C04BLime, magnesia3%

C30BSingle-crystal growth3%

G01NInvestigating or analysing materials by determining their chemical or physical properties3%

G02BOptical elements, systems or apparatus3%

G06TImage data processing or generation, in general3%

PatentTitleYear

5,612,236'Method of forming a silicon semiconductor device using doping during deposition of polysilicon'1997 5,378,652'Method of making a through hole in multi-layer insulating films'1995 5,291,058'Semiconductor device silicon via fill formed in multiple dielectric layers'1994 5,238,859'Method of manufacturing semiconductor device'1993 5,210,400'Solid-state imaging device applicable to high sensitivity color camera and using diffraction gratings'1993 5,181,088'Vertical field effect transistor with an extended polysilicon channel region'1993 5,149,666'Method of manufacturing a semiconductor memory device having a floating gate electrode composed of 2-10 silicon grains'1992 5,032,535'Method of manufacturing semiconductor device'1991 5,031,010'Semiconductor memory device and method of manufacturing the same'1991 4,958,373'Defect-recognition processing apparatus'1990 4,893,273'Semiconductor memory device for storing image data'1990 4,879,585'Semiconductor device'1989 4,597,159'Method of manufacturing SiO.sub.2 -Si interface for floating gate semiconductor device'1986 4,515,755'Apparatus for producing a silicon single crystal from a silicon melt'1985

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1985Patents assigned to TOKYO SHIBAURA ELECTRIC CO (1)· patent assignee history

1985Patents assigned to TOSHIBA CERAMICS CO (1)· patent assignee history

1985–1997Based in Yokohama, JP· patent location history

1986–1997Patents assigned to TOSHIBA KK (13)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TOSHIBA KK	13	1986–1997
TOKYO SHIBAURA ELECTRIC CO	1	1985
TOSHIBA CERAMICS CO	1	1985

Locations

Location	Patents	Span
Yokohama, JP	14	1985–1997