Inventor
Gengming Tao
Inventor
San Diego, CA, US
Overview
Patents· 34 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices30%
H10DInorganic electric semiconductor devices27%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
G11CStatic stores6%
H10BElectronic memory devices4%
H03FAmplifiers3%
H03HImpedance networks, e.g. resonant circuits2%
H10NElectric solid-state devices not otherwise provided for2%
B82YSpecific uses or applications of nanostructures1%
PatentTitleYear
10,868,161Low resistance source/drain regions in III-V transistors202010,756,206High power compound semiconductor field effect transistor devices with low doped drain202010,749,017Heterojunction bipolar transistors with field plates202010,734,384Vertically-integrated two-dimensional (2D) semiconductor slabs in complementary field effect transistor (CFET) cell circuits, and method of fabricating202010,672,807Photo detectors202010,622,465Heterojunction bipolar transistor (HBT)202010,615,113Rotated metal-oxide-metal (RTMOM) capacitor202010,615,988Compact and reliable physical unclonable function devices and methods202010,615,294Variable capacitor202010,580,908Variable thickness gate oxide transcap202010,522,367Gettering layer formation and substrate201910,490,639Low collector contact resistance heterojunction bipolar transistors201910,483,287Double gate, flexible thin-film transistor (TFT) complementary metal-oxide semiconductor (MOS) (CMOS) circuits and related fabrication methods201910,482,929Non-volative (NV) memory (NVM) matrix circuits employing NVM matrix circuits for performing matrix computations201910,475,889Gallium nitride power amplifier integration with metal-oxide-semiconductor devices201910,461,164Compound semiconductor field effect transistor with self-aligned gate201910,431,581Complementary metal-oxide semiconductor (CMOS) integration with compound semiconductor devices201910,396,188Heterojunction bipolar transistors and method of fabricating the same201910,319,830Heterojunction bipolar transistor power amplifier with backside thermal heatsink201910,312,244Bi-stable static random access memory (SRAM) bit cells that facilitate direct writing for storage201910,283,650Silicon on insulator (SOI) transcap integration providing front and back gate capacitance tuning201910,224,368Voltage-switched magneto-resistive random access memory (MRAM) employing separate read operation circuit paths from a shared spin torque write operation circuit path201910,205,018Planar double gate semiconductor device201910,186,514Bi-stable static random access memory (SRAM) bit cells formed from III-V compounds and configured to achieve higher operating speeds201910,170,610Pseudomorphic high electron mobility transistor with low contact resistance201910,164,054Compound semiconductor field effect transistor with self-aligned gate201810,158,030CMOS and bipolar device integration including a tunable capacitor201810,134,881Quantum well thermal sensing for power amplifier201810,109,724Heterojunction bipolar transistor unit cell and power stage for a power amplifier201810,084,074Compound semiconductor field effect transistor gate length scaling201810,062,683Compound semiconductor transistor and high-Q passive device single chip integration201810,043,826Fully depleted silicon on insulator integration201810,026,731Compound semiconductor transistor integration with high density capacitor20189,875,784Three-dimensional (3D) ferroelectric dipole metal-oxide semiconductor ferroelectric field-effect transistor (MOSFeFET) system, and related methods and systems2018Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2018–2020Patents assigned to QUALCOMM INC (34)· patent assignee history
2018–2020Based in San Diego, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| QUALCOMM INC | 34 | 2018–2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| San Diego, California, US | 34 | 2018–2020 |