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Inventor

Kam S. Law

Inventor
Union City, CA, US

Overview

71→
Patents
1989–2019
Patent span
Electricity
Primary field (CPC H)

Patents· 71 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C23Cprimary
C23CCoating metallic material24%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
H01JElectric discharge tubes or discharge lamps14%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests9%
H10DInorganic electric semiconductor devices7%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
Y10TTechnical subjects covered by former us classification5%
C03CChemical composition of glasses, glazes or vitreous enamels2%
G06TImage data processing or generation, in general2%
H02NElectric machines not otherwise provided for2%
PatentTitleYear
10,333,104Method and apparatus for encapsulation of an organic light emitting diode20199,287,152'Auto-sequencing multi-directional inline processing method'20168,672,603'Auto-sequencing inline processing apparatus'20148,617,349'Showerhead assembly for plasma processing chamber'20138,444,364'Auto-sequencing multi-directional inline processing apparatus'20137,732,010'Method for supporting a glass substrate to improve uniform deposition thickness'20107,439,191'Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications'20087,220,685'Method for depositing porous films'20077,132,374'Method for depositing porous films'20067,122,962'Plasma display panel with a low K dielectric layer'20067,087,179'Optical integrated circuits (ICs)'20067,056,830'Method for plasma etching a dielectric layer'20067,029,529'Method and apparatus for metallization of large area substrates'20066,981,508'On-site cleaning gas generation for process chamber cleaning'20066,902,682'Method and apparatus for electrostatically maintaining substrate flatness'20056,887,776'Methods to form metal lines using selective electrochemical deposition'20056,880,561'Fluorine process for cleaning semiconductor process chamber'20056,869,838'Deposition of passivation layers for active matrix liquid crystal display (AMLCD) applications'20056,857,387'Multiple frequency plasma chamber with grounding capacitor at cathode'20056,843,258'On-site cleaning gas generation for process chamber cleaning'20056,825,134'Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow'20046,818,529'Apparatus and method for forming a silicon film across the surface of a glass substrate'20046,647,993'Surface-treated shower head for use in a substrate processing chamber'20036,610,354'Plasma display panel with a low k dielectric layer'20036,500,265'Apparatus for electrostatically maintaining subtrate flatness'20026,500,356'Selectively etching silicon using fluorine without plasma'20026,468,601'Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology'20026,451,390'Deposition of TEOS oxide using pulsed RF plasma'20026,444,277'Method for depositing amorphous silicon thin films onto large area glass substrates by chemical vapor deposition at high deposition rates'20026,355,108'Film deposition using a finger type shadow frame'20026,352,910'Method of depositing amorphous silicon based films having controlled conductivity'20026,338,874'Method for multilayer CVD processing in a single chamber'20026,235,634'Modular substrate processing system'20016,207,304'Method of forming silicon oxy-nitride films by plasma-enhanced chemical vapor deposition'20016,182,603'Surface-treated shower head for use in a substrate processing chamber'20016,177,023'Method and apparatus for electrostatically maintaining substrate flatness'20016,172,322'Annealing an amorphous film using microwave energy'20016,167,834'Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process'20016,055,927'Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology'2000RE036623'Process for PECVD of silicon oxide using TEOS decomposition'20006,024,044'Dual frequency excitation of plasma for film deposition'20005,928,732'Method of forming silicon oxy-nitride films by plasma-enhanced chemical vapor deposition'19995,902,650'Method of depositing amorphous silicon based films having controlled conductivity'19995,895,937'Tapered dielectric etch in semiconductor devices'19995,895,548'High power microwave plasma applicator'19995,893,757'Tapered profile etching method'19995,892,328'High-power, plasma-based, reactive species generator'19995,871,811'Method for protecting against deposition on a selected region of a substrate'19995,861,197'Deposition of high quality conformal silicon oxide thin films on glass substrates'19995,851,602'Deposition of high quality conformal silicon oxide thin films for the manufacture of thin film transistors'19985,843,277'Dry-etch of indium and tin oxides with C2H5I gas'19985,788,778'Deposition chamber cleaning technique using a high power remote excitation source'19985,755,886'Apparatus for preventing deposition gases from contacting a selected region of a substrate during deposition processing'19985,753,133'Method and apparatus for etching film layers on large substrates'19985,728,608'Tapered dielectric etch in semiconductor devices'19985,607,602'High-rate dry-etch of indium and tin oxides by hydrogen and halogen radicals such as derived from HCl gas'19975,589,233'Single chamber CVD process for thin film transistors'19965,567,476'Multi-step chemical vapor deposition method for thin film transistors'19965,441,768'Multi-step chemical vapor deposition method for thin film transistors'19955,399,387'Plasma CVD of silicon nitride thin films on large area glass substrates at high deposition rates'19955,380,566'Method of limiting sticking of body to susceptor in a deposition treatment'19955,366,585'Method and apparatus for protection of conductive surfaces in a plasma processing reactor'19945,362,526'Plasma-enhanced CVD process using TEOS for depositing silicon oxide'19945,354,715'Thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process'19945,244,841'Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing'19935,204,288'Method for planarizing an integrated circuit structure using low melting inorganic material'19935,112,776'Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing'19925,000,113'Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process'19914,960,488'Reactor chamber self-cleaning process'19904,892,753'Process for PECVD of silicon oxide using TEOS decomposition'19904,872,947'CVD of silicon oxide using TEOS decomposition and in-situ planarization process'1989

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1989–2010Patents assigned to APPLIED MATERIALS INC (43)· patent assignee history
1989–2010Based in Union City, CA, US· patent location history
1996–2003Patents assigned to APPLIED KOMATSU TECHNOLOGY INC (20)· patent assignee history
2006–2014Patents assigned to LAW KAM S (5)· patent assignee history
2006–2019Based in San Jose, CA, US· patent location history
2013–2019Patents assigned to ORBOTECH LT SOLAR LLC (5)· patent assignee history
2013–2014Patents assigned to BLONIGAN WENDELL THOMAS (3)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
APPLIED MATERIALS INC431989–2010
APPLIED KOMATSU TECHNOLOGY INC201996–2003
LAW KAM Sself52006–2014
ORBOTECH LT SOLAR LLC52013–2019
BLONIGAN WENDELL THOMAS32013–2014
Locations
LocationPatentsSpan
Union City, California, US641989–2010
San Jose, California, US72006–2019