Inventor
Joerg Appenzeller
Inventor
Valhalla, NY, US
Overview
Patents· 24 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
B82Yprimary
B82YSpecific uses or applications of nanostructures23%
H10DInorganic electric semiconductor devices20%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests16%
H10KOrganic electric solid-state devices11%
B82BNanostructures formed by manipulation of individual atoms, molecules, or limited collections of atoms or molecules as discrete units6%
H01LSemiconductor devices6%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
G11CStatic stores4%
H10BElectronic memory devices4%
H10NElectric solid-state devices not otherwise provided for3%
PatentTitleYear
10,756,263Phase transition based resistive random-access memory202010,505,109Phase transition based resistive random-access memory20199,190,135'Organic ferroelectric material based random access memory'20159,041,440'Graphene-based frequency tripler'20158,835,238'Semiconductor nanostructures, semiconductor devices, and methods of making same'20148,765,539'Semiconductor nanostructures, semiconductor devices, and methods of making same'20148,637,374'Method of fabricating self-aligned nanotube field effect transistor'20148,637,361'Semiconductor nanostructures, semiconductor devices, and methods of making same'20148,362,582'Semiconductor nanostructures, semiconductor devices, and methods of making same'20138,211,741'Carbon nanotube based integrated semiconductor circuit'20128,138,491'Self-aligned nanotube field effect transistor'20128,017,934'Carbon nanotube based integrated semiconductor circuit'20117,955,931'Method and apparatus for fabricating a carbon nanotube transistor'20117,948,050'Core-shell nanowire transistor'20117,897,960'Self-aligned nanotube field effect transistor'20117,851,783'Method and apparatus for fabricating a carbon nanotube transistor'20107,786,466'Carbon nanotube based integrated semiconductor circuit'20107,635,856'Vertical nanotube field effect transistor'20097,482,232'Method for fabricating a nanotube field effect transistor'20097,253,065'Self-aligned nanotube field effect transistor and method of fabricating same'20077,183,568'Piezoelectric array with strain dependant conducting elements and method therefor'20077,180,107'Method of fabricating a tunneling nanotube field effect transistor'20077,141,727'Method and apparatus for fabricating a carbon nanotube transistor having unipolar characteristics'20066,891,227'Self-aligned nanotube field effect transistor and method of fabricating same'2005Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2005–2014Patents assigned to IBM (20)· patent assignee history
2005–2014Based in Valhalla, NY, US· patent location history
2006Based in Valballa, NY, US· patent location history
2010–2020Based in West Lafayette, IN, US· patent location history
2012–2015Patents assigned to APPENZELLER JOERG (6)· patent assignee history
2012–2014Patents assigned to AVOURIS PHAEDON (2)· patent assignee history
2012–2014Patents assigned to CHAN KEVIN K (2)· patent assignee history
2015–2020Patents assigned to PURDUE RESEARCH FOUNDATION (4)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 20 | 2005–2014 |
| APPENZELLER JOERGself | 6 | 2012–2015 |
| PURDUE RESEARCH FOUNDATION | 4 | 2015–2020 |
| AVOURIS PHAEDON | 2 | 2012–2014 |
| CHAN KEVIN K | 2 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Valhalla, New York, US | 14 | 2005–2014 |
| West Lafayette, IN, US | 9 | 2010–2020 |
| Valballa, New York, US | 1 | 2006 |